IXSX50N60BU1 Datasheet IXSK50N60BU1, IXSX50N60BU1 | P1-P3

1 - 6

TO-264 AA

G

C

E

G = Gate, C = Collector,

E = Emitter, TAB = Collector

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 600 V

V

CGR

T

J

= 25°C to 150°C; R

GE

= 1 MW 600 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C, limited by leads 75 A

I

C90

T

C

= 90°C50A

I

CM

T

C

= 25°C, 1 ms 200 A

SSOA V

GE

= 15 V, T

VJ

= 125°C, R

G

= 22 W I

CM

= 100 A

(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V

CES

t

SC

V

GE

= 15 V, V

CE

= 360 V, T

J

= 125°C 10ms

(SCSOA) R

G

= 22 W, non repetitive

P

C

T

C

= 25°C 300 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

M

d

Mounting torque 0.9/6 Nm/lb.in.

Weight 10 g

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

IGBT with Diode V

CES

= 600 V

I

C25

= 75 A

V

CE(sat)

= 2.5 V

Short Circuit SOA Capability

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

BV

CES

I

C

= 3 mA, V

GE

= 0 V 600 V

V

GE(th)

I

C

= 4 mA, V

CE

= V

GE

48V

I

CES

V

CE

= 0.8 • V

CES

T

J

= 25°C 325 mA

V

GE

= 0 V T

J

= 125°C17mA

I

GES

V

CE

= 0 V, V

GE

= ±20 V ±100 nA

V

CE(sat)

I

C

= I

C90

; V

GE

= 15 V, 2.2 2.5 V

Features

• International standard package

JEDEC TO-264 AA, and hole-less

TO-247 package for clip mounting

• Guaranteed Short Circuit SOA

capability

• High frequency IGBT and anti-

parallel FRED in one package

• Latest generation HDMOS

TM

process

• Low V

CE(sat)

- for minimum on-state conduction

losses

• MOS Gate turn-on

- drive simplicity

• Fast Recovery Epitaxial Diode (FRED)

- soft recovery with low I

RM

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptible power supplies (UPS)

• Switch-mode and resonant-mode

power supplies

Advantages

• Space savings (two devices in one

package)

• Easy to mount with 1 screw

(isolated mounting screw hole)

• Reduces assembly time and cost

97520A (12/98)

IXSK 50N60BU1

IXSX 50N60BU1

PLUS247

(IXSX)

G

C

E

C (TAB)

(IXSK)

IXYS reserves the right to change limits, test conditions, and dimensions.

2 - 6

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

I

C

= I

C90

; V

CE

= 10 V, 20 23 S

Pulse test, t £ 300 ms, duty cycle £ 2 %

I

C(on)

V

GE

= 15 V, V

CE

= 10 V 160 A

C

ies

3850 pF

C

oes

V

CE

= 25 V, V

GE

= 0 V, f = 1 MHz 440 pF

C

res

50 pF

Q

g

167 nC

Q

ge

I

C

= I

C90

, V

GE

= 15 V, V

CE

= 0.5 V

CES

45 nC

Q

gc

88 nC

t

d(on)

70 ns

t

ri

70 ns

t

d(off)

150 300 ns

t

fi

150 300 ns

E

off

3.3 6.0 mJ

t

d(on)

70 ns

t

ri

70 ns

E

on

2.5 mJ

t

d(off)

230 ns

t

fi

230 ns

E

off

4.8 mJ

R

thJC

0.42 K/W

R

thCK

0.15 K/W

Reverse Diode (FRED) Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

V

F

I

F

= I

C90

, V

GE

= 0 V, 1.8 V

Pulse test, t £ 300 ms, duty cycle d £ 2 %

I

RM

I

F

= I

C90

, V

GE

= 0 V, -di

F

/dt = 480 A/ms1933A

t

rr

V

R

= 360 V T

J

= 125°C 175 ns

I

F

= 1 A; -di/dt = 200 A/ms; V

R

= 30 V T

J

=25°C3550ns

R

thJC

0.75 K/W

Inductive load, T

J

= 25°C

I

C

= I

C90

, V

GE

= 15 V, L = 100 mH,

V

CE

= 0.8 V

CES

, R

G

= 2.7 W

Remarks: Switching times may increase

for V

CE

(Clamp) > 0.8 • V

CES

, higher T

J

or

increased R

G

Inductive load, T

J

= 125°C

I

C

= I

C90

, V

GE

= 15 V, L = 100 mH

V

CE

= 0.8 V

CES

, R

G

= 2.7 W

Remarks: Switching times may increase

for V

CE

(Clamp) > 0.8 • V

CES

, higher T

J

or

increased R

G

PLUS247

TM

(IXSX)

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A

1

2.29 2.54 .090 .100

A

2

1.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b

1

1.91 2.13 .075 .084

b

2

2.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 .244

R 4.32 4.83 .170 .190

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

TO-264 AA Outline

IXSK 50N60BU1

IXSX 50N60BU1

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

3 - 6

V

GE

- Volts

4 6 8 10 12 14 16

I

C

- Amperes

0

20

40

60

80

100

V

CE

-Volts

0 5 10 15 20 25 30 35 40

Capacitance - pF

10

100

1000

10000

T

J

- Degrees C

25 50 75 100 125 150

V

CE (sat)

- Normalized

0.4

0.6

0.8

1.0

1.2

1.4

1.6

V

CE

- Volts

0246810

I

C

- Amperes

0

20

40

60

80

100

V

CE

- Volts

0 4 8 121620

I

C

- Amperes

0

40

80

120

160

13V

11V

9V

V

CE

= 10V

T

J

= 25°C

V

GE

= 15V

T

J

= 25°C

I

C

= 25A

I

C

= 50A

I

C

= 100A

T

J

= 125°C

C

rss

f = 1Mhz

9V

V

GE

= 15V

T

J

= 25°C

V

CE

- Volts

0246810

I

C

- Amperes

0

20

40

60

80

100

T

J

= 125°C

C

iss

C

oss

7V

9V

11V

7V

13V

V

GE

= 15V

13V

11V

V

GE

= 15V

IXSK 50N60BU1

IXSX 50N60BU1

Figure 1. Saturation Voltage Characteristics

Figure 2. Extended Output Characteristics

Figure 3. Saturation Voltage Characteristics

Figure 4. Temperature Dependence of V

CE(sat)

Figure 5. Admittance Curves

Figure 6. Capacitance Curves

IXSX50N60BU1

IXSX50N60BU1

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