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IXSX50N60BU1

P1-P3P4-P6
4 - 6
© 2000 IXYS All rights reserved
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
Z
thJC
(K/W)
0.001
0.01
0.1
1
D=0.02
V
CE
- Volts
0 100 200 300 400 500 600
I
C
- Amperes
0.1
1
10
100
Q
g
- nanocoulombs
0 25 50 75 100 125 150 175
0
4
8
12
16
20
R
G
- Ohms
0 102030405060
E
(OFF)
- millijoules
0
5
10
15
20
E
(ON)
- millijoules
0
1
2
3
4
I
C
- Amperes
0 20406080100
E
(OFF)
- milliJoules
0
4
8
12
16
20
24
E
(ON)
-
millijo
u
les
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
CE
= 250V
I
C
=50A
E
(ON)
E
(OFF)
E
(ON)
E
(OFF)
T
J
= 125°C
R
G
= 6.2
dV/dt < 5V/ns
D=0.1
D=0.05
Single pulse
D = Duty Cycle
T
J
= 125°C
R
G
= 10
600
E
(OFF)
E
(OFF)
D=0.2
D=0.5
D=0.01
I
C
=25A
T
J
= 125°C
I
C
= 100A
I
C
= 50A
E
(ON)
E
(ON)
IXSK 50N60BU1
IXSX 50N60BU1
Figure 9. Gate Charge
Figure 10. Turn-off Safe Operating Area
Figure 11. Transient Thermal Resistance
Figure 7. Dependence of E
ON
and E
OFF
on I
C
. Figure 8. Dependence of E
ON
and E
OFF
on
R
G
.
5 - 6
© 2000 IXYS All rights reserved
IXSK 50N60BU1
IXSX 50N60BU1
Fig. 12 Forward current Fig. 13 Recovery charge versus -di
F
/dt. Fig. 14 Peak reverse current versus
versus voltage drop. -di
F
/dt.
Fig. 15. Dynamic parameters versus Fig. 16 Recovery time versus -di
F
/dt. Fig. 17 Peak forward voltage vs. di
F
/dt.
junction temperature.
Fig. 18 Transient thermal impedance junction to case.
6 - 6
© 2000 IXYS All rights reserved
IXSK 50N60BU1
IXSX 50N60BU1
P1-P3P4-P6

IXSX50N60BU1

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Description:
IGBT 600V 75A 300W PLUS247
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