Philips Semiconductors
BUK95/9608-55A
TrenchMOS™ logic level FET
Product data Rev. 03 — 6 May 2002 2 of 14
9397 750 09573
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5. Quick reference data
6. Limiting values
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package.
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
DS
drain-source voltage (DC) - 55 V
I
D
drain current (DC) T
mb
=25°C; V
GS
= 5 V - 125 A
P
tot
total power dissipation T
mb
=25°C - 253 W
T
j
junction temperature - 175 °C
R
DSon
drain-source on-state resistance T
j
=25°C; V
GS
=5V; I
D
=25A 6.8 8 mΩ
T
j
=25°C; V
GS
= 4.5 V; I
D
=25A - 8.5 mΩ
T
j
=25°C; V
GS
= 10 V; I
D
= 25 A 6.4 7.5 mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) - 55 V
V
DGR
drain-gate voltage (DC) R
GS
=20kΩ -55V
V
GS
gate-source voltage (DC) - ±15 V
I
D
drain current (DC) T
mb
=25°C; V
GS
=5V;
Figure 2 and 3
[1]
- 125 A
[2]
-75A
T
mb
= 100 °C; V
GS
=5V;Figure 2
[2]
-75A
I
DM
peak drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs;
Figure 3
- 503 A
P
tot
total power dissipation T
mb
=25°C; Figure 1 - 253 W
T
stg
storage temperature −55 +175 °C
T
j
junction temperature −55 +175 °C
Source-drain diode
I
DR
reverse drain current (DC) T
mb
=25°C
[1]
- 125 A
[2]
-75A
I
DRM
peak reverse drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs - 503 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source avalanche
energy
unclamped inductive load; I
D
=75A;
V
DS
≤ 55 V; V
GS
=5V; R
GS
=50Ω;
starting T
mb
=25°C
- 670 mJ
