Philips Semiconductors
BUK95/9608-55A
TrenchMOS™ logic level FET
Product data Rev. 03 — 6 May 2002 5 of 14
9397 750 09573
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 0.25 mA; V
GS
=0V
T
j
=25°C55--V
T
j
= −55 °C50--V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
;
Figure 9
T
j
=25°C 1 1.5 2 V
T
j
= 175 °C 0.5 - - V
T
j
= −55 °C - - 2.3 V
I
DSS
drain-source leakage current V
DS
= 55 V; V
GS
=0V
T
j
=25°C - 0.05 10 µA
T
j
= 175 °C - - 500 µA
I
GSS
gate-source leakage current V
GS
= ±10 V; V
DS
= 0 V - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=5V; I
D
=25A;
Figure 7 and 8
T
j
=25°C - 6.8 8 mΩ
T
j
= 175 °C--16mΩ
V
GS
= 4.5 V; I
D
=25A - - 8.5 mΩ
V
GS
=10V; I
D
= 25 A - 6.4 7.5 mΩ
Dynamic characteristics
Q
g(tot)
total gate charge V
GS
=5V; V
DD
=44V;
I
D
=25A;Figure 14
-92-nC
Q
gs
gate-to-source charge - 11 - nC
Q
gd
gate-to-drain (Miller) charge - 43 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V;
f = 1 MHz; Figure 12
- 4551 6021 pF
C
oss
output capacitance - 760 900 pF
C
rss
reverse transfer capacitance - 500 687 pF
t
d(on)
turn-on delay time V
DD
= 30 V; R
L
= 1.2 Ω;
V
GS
=5V; R
G
=10Ω
-40-ns
t
r
rise time - 175 - ns
t
d(off)
turn-off delay time - 280 - ns
t
f
fall time - 167 - ns
L
d
internal drain inductance from drain lead 6 mm from
package to centre of die
- 4.5 - nH
from contact screw on
mounting base to centre of
die SOT78
- 3.5 - nH
from upper edge of drain
mounting base to centre of
die SOT404
- 2.5 - nH
L
s
internal source inductance from source lead to source
bond pad
- 7.5 - nH
