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VCNT2020

P1-P3P4-P6P7-P7
VCNT2020
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 21-Feb-18
1
Document Number: 84285
For technical questions, contact: sensorstechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Reflective Optical Sensor with Transistor Output
DESCRIPTION
The VCNT2020 is a reflective sensor in a miniature SMD
package. It has a compact construction where the emitting
light source and the detector are arranged in the same
plane. The operating infrared wavelength is 940 nm. The
detector consists of a silicon phototransistor. The sensor
analog output signal (photo current) is triggered by
detection of reflected infrared light from a close by object.
The sensor has a built in daylight blocking filter, which
greatly suppresses disturbing ambient light and therefore
increases signal to noise ratio.
FEATURES
• Package type: SMD
• Detector type: phototransistor
• Dimensions (L x W x H in mm): 2.5 x 2 x 0.8
• Operating range within > 20 % relative collector
current: 0.2 mm to 2.5 mm
• Emitter wavelength: 940 nm
• Moisture sensitivity level (MSL): 4
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Position sensor
• Optical switch
• Optical encoder (e.g. disc and tape drives for DVD and / or
camera applications)
• Object detection (e.g. paper presence in printer and copy
machines)
Notes
(1)
CTR: current transfer ratio, I
out
/I
in
(2)
Conditions like in table basic characteristics/sensors
Note
(1)
MOQ: minimum order quantity
PRODUCT SUMMARY
PART NUMBER
DISTANCE FOR
MAXIMUM CTR
rel
(1)
(mm)
DISTANCE RANGE FOR
RELATIVE I
out
> 20 %
(mm)
TYPICAL OUTPUT CURRENT
UNDER TEST
(2)
(mA)
DAYLIGHT BLOCKING
FILTER INTEGRATED
VCNT2020 0.5 0.2 to 2.5 1.6 Yes
ORDERING INFORMATION
ORDERING CODE PACKAGING VOLUME
(1)
REMARKS
VCNT2020 Tape and reel MOQ: 3000 pcs Drypack, MSL 4
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT (EMITTER)
Reverse voltage V
R
5V
Forward current I
F
100 mA
Forward surge current t
p
≤ 100 μs I
FSM
500 mA
OUTPUT (DETECTOR)
Collector emitter breakdown voltage V
(BR)CEO
20 V
Emitter collector voltage V
ECO
7V
Collector current I
C
20 mA
SENSOR
Total power dissipation T
amb
≤ 25 °C P
tot
170 mW
Ambient temperature range T
amb
-25 to +85 °C
Storage temperature range T
stg
-25 to +85 °C
Soldering temperature In accordance with Fig. 11 T
sd
260 °C
VCNT2020
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 21-Feb-18
2
Document Number: 84285
For technical questions, contact: sensorstechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Forward Current vs. Ambient Temperature
Fig. 3 - Test Circuit
0
20
40
60
80
100
120
140
160
180
0 20406080100
P
V
- Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
R
thJA
= 380 K/W
0
20
40
60
80
100
120
0 20406080100
I
F
- Forward Current (mA)
T
amb
- Ambient Temperature (°C)
R
thJA
= 380 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT (EMITTER)
Forward voltage
I
F
= 20 mA
V
F
- 1.25 1.4
V
I
F
= 100 mA - 1.5 1.7
Temperature coefficient of V
F
I
F
= 20 mA TKV
F
--1.0-mV/K
Peak wavelength I
F
= 100 mA λ
P
- 940 - nm
Reverse current V
R
= 5 V I
R
- - 10 μA
OUTPUT (DETECTOR)
Collector emitter breakdown voltage I
C
= 0.1 mA, E = 0 V
(BR)CEO
20 - - V
Emitter collector voltage I
E
= 100 μA, E = 0 V
ECO
7--V
Collector emitter dark current V
CE
= 5 V, E = 0 I
CEO
- 1 100 nA
SENSOR
Collector current V
CE
= 5 V, I
F
= 20 mA, d = 1 mm I
C
0.5 1.6 3.5 mA
Current transfer ratio I
C
/I
F
, d = 1 mm, V
CE
= 5 V CTR - 8 - %
Rise time I
C
= 0.8 mA, V
CE
= 5 V, R
L
= 100 Ω t
r
-1070μs
Fall time I
C
= 0.8 mA, V
CE
= 5 V, R
L
= 100 Ω t
f
-1570μs
Object:
at mirror
d = working distance 1 mm
VCNT2020
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 21-Feb-18
3
Document Number: 84285
For technical questions, contact: sensorstechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Forward Voltage vs. Ambient Temperature
Fig. 6 - Collector Dark Current vs. Ambient Temperature
Fig. 7 - Collector Current vs. Forward Current
Fig. 8 - Relative Collector Current vs. Ambient Temperature
Fig. 9 - Relative Collector Current vs. Distance
0
90
100
1.0 1.1 1.2 1.3 1.4 1.6
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
t
p
= 20 ms
80
70
60
50
40
30
20
10
1.5
1.00
1.10
1.20
1.30
1.40
1.45
-50 -25 0 25 50 75 100 125
V
F
- Forward Voltage (V)
T
amb
- Ambient Temperature (°C)
I
F
= 50 mA
I
F
= 20 mA
I
F
= 10 mA
1.05
1.15
1.25
1.35
t
p
= 20 ms
0.0001
0.001
0.01
0.1
1
10
-50 0 50 100 125
I
CEO
- Collector Dark Current (μA)
T
amb
- Ambient Temperature (°C)
-25 25 75
V
CE
= 20 V
0.1
1
10
10 100
I
C
- Collector Current (mA)
I
F
- Forward Current (mA)
V
CE
= 5 V
d = 1 mm
50
90
100
110
120
150
-50 -25 0 25 50 125
I
C, rel
- Relative Collector Current (%)
T
amb
- Ambient Temperature (°C)
75 100
80
70
V
CE
= 5 V
d = 1 mm
60
130
140
I
F
= 50 mA
I
F
= 20 mA
I
F
= 10 mA
0
20
40
60
80
120
012345 7
I
C, rel
- Relative Collector Current (%)
z - Distance (mm)
100
6
P1-P3P4-P6P7-P7

VCNT2020

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Reflective Optical Sensor with Transistor Output
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