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IXTP48N20T

P1-P3P4-P5
© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 175°C 200 V
V
DGR
T
J
= 25°C to 175°C, R
GS
= 1MΩ 200 V
V
GSM
Transient ± 30 V
I
D25
T
C
= 25°C48 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
130 A
I
A
T
C
= 25°C5 A
E
AS
T
C
= 25°C 500 mJ
dv/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
,T
J
≤ 175°C 3 V/ns
P
D
T
C
= 25°C 250 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +175 °C
T
L
1.6mm (0.062in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10 seconds 260 °C
F
C
Mounting Force (TO-263) 10..65/2.2..14.6 Nm/lb.in
M
d
Mounting Torque (TO-220 & TO-3P) 1.13/10 Nm/lb.in
Weight TO-263 2.5 g
TO-220 3.0 g
TO-3P 5.5 g
Trench
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXTA48N20T
IXTP48N20T
IXTQ48N20T
V
DSS
= 200V
I
D25
= 48A
R
DS(on)
≤≤
≤≤
≤
50m
ΩΩ
ΩΩ
Ω
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 200 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250μA 2.5 4.5 V
I
GSS
V
GS
= ± 20V, V
DS
= 0V ± 100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 5 μA
T
J
= 150°C 250 μA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 40 50 mΩ
DS99948A(02/10)
Features
z
High Current Handling Capability
z
Avalanche Rated
z
Fast Intrinsic Rectifier
z
Low R
DS(on)
Advantages
z
Easy to Mount
z
Space Savings
z
High Power Density
Applications
z
DC-DC Converters
z
Battery Chargers
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC Choppers
z
AC Motor Drives
z
Uninterruptible Power Supplies
z
High Speed Power Switching
Applications
G
D
S
TO-220AB (IXTP)
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
TO-3P (IXTQ)
D
G
S
D (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA48N20T IXTP48N20T
IXTQ48N20T
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.40 0.74 .016 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .280 .320
E 9.65 10.41 .380 .405
E1 6.22 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.13 0 .005
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1 26 44 S
C
iss
3090 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 350 pF
C
rss
40 pF
t
d(on)
20 ns
t
r
26 ns
t
d(off)
46 ns
t
f
28 ns
Q
g(on)
60 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
18 nC
Q
gd
13 nC
R
thJC
0.50 °C/W
R
thCS
TO-220 0.50 °C/W
R
thCS
TO-3P 0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 48 A
I
SM
Repetitive, Pulse Width Limited by T
JM
192 A
V
SD
I
F
= 48A, V
GS
= 0V, Note 1 1.2 V
t
rr
130 ns
I
RM
8.5
A
Q
RM
550 nC
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 10Ω(External)
I
F
= 0.5 • I
D25
, V
GS
= 0V
-di/dt = 100A/μs
V
R
= 0.5 • V
DSS
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA48N20T IXTP48N20T
IXTQ48N20T
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
45
50
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
02468101214161820
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 3. Output Characteristics @ T
J
= 150ºC
0
5
10
15
20
25
30
35
40
45
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 24A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 48A
I
D
= 24A
Fig. 5. R
DS(on)
Normalized to I
D
= 24A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 102030405060708090100110
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
5
10
15
20
25
30
35
40
45
50
55
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
P1-P3P4-P5

IXTP48N20T

Mfr. #:
Buy IXTP48N20T
Manufacturer:
Littelfuse
Description:
MOSFET 48 Amps 200V 50 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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