© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_48N20T(4W)02-12-10-A
IXTA48N20T IXTP48N20T
IXTQ48N20T
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
6
10
14
18
22
26
30
34
10 15 20 25 30 35 40 45 50
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 5 , V
GS
= 15V
V
DS
= 100V
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
10
12
14
16
18
20
22
4 6 8 101214161820
R
G
- Ohms
t
r
- Nanoseconds
16
17
18
19
20
21
22
t
d
on
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 100V
I
D
= 48A
I
D
= 24A
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
18
20
22
24
26
28
30
32
34
36
38
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
42
44
46
48
50
52
54
56
58
60
62
t
d
off
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5, V
GS
= 15V
V
DS
= 100V
I
D
= 24A
I
D
= 48A
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
18
20
22
24
26
28
30
32
10 15 20 25 30 35 40 45 50
I
D
- Amperes
t
f
- Nanoseconds
40
44
48
52
56
60
64
68
t
d
off
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5, V
GS
= 15V
V
DS
= 100V
T
J
= 25ºC
T
J
= 125ºC
T
J
= 25ºC
T
J
= 125ºC
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
8
12
16
20
24
28
32
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 5 , V
GS
= 15V
V
DS
= 100V
I
D
= 48A
I
D
= 24A
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
18
26
34
42
50
58
66
4 6 8 101214161820
R
G
- Ohms
t
f
- Nanoseconds
40
60
80
100
120
140
160
t
d
off
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 100V
I
D
= 48A
I
D
= 24A
