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MMBT3904TT1G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2011
June, 2017 − Rev. 6
1 Publication Order Number:
MMBT3904TT1/D
MMBT3904TT1G,
SMMBT3904TT1G
General Purpose Transistors
NPN Silicon
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−416/SC−75 package which is
designed for low power surface mount applications.
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Value Unit
Collector − Emitter Voltage V
CEO
40 Vdc
Collector − Base Voltage V
CBO
60 Vdc
Emitter − Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1) @T
A
= 25°C
Derated above 25°C
P
D
200
1.6
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
q
JA
600 °C/W
Total Device Dissipation,
FR−4 Board (Note 2) @T
A
= 25°C
Derated above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
R
q
JA
400 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
SOT−416/SC−75
CASE 463
STYLE 1
MARKING DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
MMBT3904TT1G SOT−416
(Pb−Free)
3,000 Tape & Ree
l
SMMBT3904TT1G SOT−416
(Pb−Free)
3,000 Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
AM = Device Code
M = Date Code*
G = Pb−Free Package
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
1
BASE
2
EMITTER
AM M G
G
1
*Date Code orientation may vary depending up-
on manufacturing location.
(Note: Microdot may be in either location)
MMBT3904TT1G, SMMBT3904TT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
40 −
Vdc
Collector−Base Breakdown Voltage
(I
C
= 10 mAdc, I
E
= 0)
V
(BR)CBO
60 −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
6.0 −
Vdc
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
I
BL
− 50
nAdc
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
I
CEX
− 50
nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
h
FE
40
70
100
60
30
−
−
300
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
−
−
0.2
0.3
Vdc
Base−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
BE(sat)
0.65
−
0.85
0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
300 −
MHz
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 4.0
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
− 8.0
pF
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
ie
1.0 10
k W
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
re
0.5 8.0
X 10
−4
Small−Signal Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
fe
100 400
−
Output Admittance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
oe
1.0 40
mmhos
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 100 mAdc, R
S
= 1.0 k W, f = 1.0 kHz)
NF
− 5.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 3.0 Vdc, V
BE
= −0.5 Vdc)
MMBT3904TT1G, SMMBT3904TT1G
t
d
− 35
ns
Rise Time (I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
MMBT3904TT1G, SMMBT3904TT1G
t
r
− 35
Storage Time (V
CC
= 3.0 Vdc, I
C
= 10 mAdc)
MMBT3904TT1G, SMMBT3904TT1G
t
s
− 200
Fall Time
(I
B1
= I
B2
= 1.0 mAdc)
MMBT3904TT1G, SMMBT3904TT1G
t
f
− 50
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MMBT3904TT1G, SMMBT3904TT1G
www.onsemi.com
3
Figure 1. Normalized Thermal Response
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
t, TIME (s)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 2. Delay and Rise Time
Equivalent Test Circuit
Figure 3. Storage and Fall Time
Equivalent Test Circuit
+3 V
275
10 k
1N916
C
S
< 4 pF*
+3 V
275
10 k
C
S
< 4 pF*
< 1 ns
-0.5 V
+10.9 V
300 ns
DUTY CYCLE = 2%
< 1 ns
-9.1 V
+10.9 V
DUTY CYCLE = 2%
t
1
0
10 < t
1
< 500 ms
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 4. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 5. Charge Data
I
C
, COLLECTOR CURRENT (mA)
5000
1.0
V
CC
= 40 V
I
C
/I
B
= 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20
30 40
0.2 0.3 0.5 0.7
Q
T
Q
A
C
ibo
C
obo
T
J
= 25°C
T
J
= 125°C
P1-P3P4-P6P7-P7

MMBT3904TT1G

Mfr. #:
Buy MMBT3904TT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 200mA 40V NPN
Lifecycle:
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