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MMBT3904TT1G

P1-P3P4-P6P7-P7
MMBT3904TT1G, SMMBT3904TT1G
www.onsemi.com
4
Figure 6. Turn−On Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
Figure 7. Rise Time
I
C
, COLLECTOR CURRENT (mA)
TIME (ns)
1.0 2.0 3.0 10 20
70
5
100
t , RISE TIME (ns)
Figure 8. Storage Time
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Fall Time
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0
30 50
200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0
30 50
200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0
30 50
200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0
30 50
200
10
30
7
20
r
t , FALL TIME (ns)
f
t , STORAGE TIME (ns)
s
′
V
CC
= 40 V
I
C
/I
B
= 10
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 10
t
r
@ V
CC
= 3.0 V
t
d
@ V
OB
= 0 V
40 V
15 V
2.0 V
I
C
/I
B
= 10
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 20
t′
s
= t
s
-
1
/
8
t
f
I
B1
= I
B2
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
Figure 10. Noise Figure
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 11. Noise Figure
R
S
, SOURCE RESISTANCE (k OHMS)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20
40
0.2 0.4
0
100
4
6
8
10
12
2
14
0.1 1.0 2.0 4.0 10 20
40
0.2 0.4
100
NF, NOISE FIGURE (dB)
f = 1.0 kHz
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50 mA
I
C
= 100 mA
SOURCE RESISTANCE = 200 W
I
C
= 1.0 mA
SOURCE RESISTANCE = 200 W
I
C
= 0.5 mA
SOURCE RESISTANCE = 500 W
I
C
= 100 mA
SOURCE RESISTANCE = 1.0 k
I
C
= 50 mA
MMBT3904TT1G, SMMBT3904TT1G
www.onsemi.com
5
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
Figure 12. Current Gain
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 13. Output Admittance
I
C
, COLLECTOR CURRENT (mA)
h , CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 14. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
Figure 15. Voltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0
5.0
0.5
10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
h , INPUT IMPEDANCE (k OHMS)
ie
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
2
1
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
fe
m
-4
TYPICAL STATIC CHARACTERISTICS
Figure 16. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50
70
0.2 0.3
0.1
100
1.00.7
200
30205.0 7.0
FE
V
CE
= 1.0 V
T
J
= +125°C
+25°C
-55°C
MMBT3904WT1
MMBT3904TT1G, SMMBT3904TT1G
www.onsemi.com
6
Figure 17. Collector Saturation Region
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
0
1.00.7 5.0 7.0
CE
I
C
= 1.0 mA
T
J
= 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
Figure 18. “ON” Voltages
I
C
, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
1.2
0.2
Figure 19. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20
50
0
100
-0.5
0
0.5
1.0
0 60 80 120 140 160
180
20 40
100
COEFFICIENT (mV/ C)
200
-1.0
-1.5
-2.0
200
°
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
=10
V
CE(sat)
@ I
C
/I
B
=10
V
BE
@ V
CE
=1.0 V
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
q
VC
FOR V
CE(sat)
q
VB
FOR V
BE(sat)
P1-P3P4-P6P7-P7

MMBT3904TT1G

Mfr. #:
Buy MMBT3904TT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 200mA 40V NPN
Lifecycle:
New from this manufacturer.
Delivery:
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