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PHD23NQ10T,118

P1-P3P4-P6P7-P9P10-P12
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHP23NQ10T, PHB23NQ10T
PHD23NQ10T
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 ˚C
.
I
D
= f(V
DS
)
Fig.6. Typical on-state resistance, T
j
= 25 ˚C
.
R
DS(ON)
= f(I
D
)
Normalised Power Derating, PD (%)
0
10
20
30
40
50
60
70
80
90
100
0 25 50 75 100 125 150 175
Mounting Base temperature, Tmb (C)
0.01
0.1
1
10
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
Pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
Normalised Current Derating, ID (%)
0
10
20
30
40
50
60
70
80
90
100
0 25 50 75 100 125 150 175
Mounting Base temperature, Tmb (C)
0
5
10
15
20
25
30
35
40
45
50
55
012345678910
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
4V
5 V
6 V
7 V
9 V
8 V
0.1
1
10
100
1000
1 10 100 1000
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
D.C.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100 us
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 1020304050
Drain Current, ID (A)
D
ra
i
n-
S
ource
O
n
R
es
i
s
t
ance,
RDS(
on
)
(Oh
ms
)
VGS =9 V
8V
6V
7 V
5 V
4V
5.5V
6.5V
August 1999 4 Rev 1.100
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHP23NQ10T, PHB23NQ10T
PHD23NQ10T
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
Fig.8. Typical transconductance, T
j
= 25 ˚C
.
g
fs
= f(I
D
)
Fig.9. Normalised drain-source on-state resistance.
R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
)
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
012345678910
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS > ID X RDS(ON)
Tj = 25 C
175 C
Threshold Voltage, VGS(TO) (V)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Junction Temperature, Tj (C)
typical
maximum
minimum
0
2
4
6
8
10
12
14
16
18
20
024681012141618202224262830
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
175 C
VDS > ID X RDS(ON)
Drain current, ID (A)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Gate-source voltage, VGS (V)
minimum
typical
maximum
Normalised On-state Resistance
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
2.7
2.9
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Junction temperature, Tj (C)
10
100
1000
10000
0.1 1 10 100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
August 1999 5 Rev 1.100
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHP23NQ10T, PHB23NQ10T
PHD23NQ10T
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
)
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Maximum permissible non-repetitive
avalanche current (I
AS
) versus avalanche time (t
AV
);
unclamped inductive load
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0 5 10 15 20 25 30 35
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 23A
Tj = 25 C
VDD = 20 V
VDD = 80 V
0.1
1
10
100
0.001 0.01 0.1 1 10
Avalanche time, t
AV
(ms)
Maximum Avalanche Current, I
AS
(A)
Tj prior to avalanche = 150 C
25 C
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 V
August 1999 6 Rev 1.100
P1-P3P4-P6P7-P9P10-P12

PHD23NQ10T,118

Mfr. #:
Buy PHD23NQ10T,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 100V 23A DPAK
Lifecycle:
New from this manufacturer.
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