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NVMFS4C05NWFT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 2
1 Publication Order Number:
NVMFS4C05N/D
NVMFS4C05N
Power MOSFET
30 V, 127 A, Single N−Channel, SO−8 FL
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• NVMFS4C05NWF − Wettable Flanks Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Notes 1, 2 and 4)
Steady
State
T
A
= 25°C
I
D
27.2
A
T
A
= 80°C 21.6
Power Dissipation
R
q
JA
(Notes 1, 2
and 4)
T
A
= 25°C
P
D
3.61 W
Continuous Drain
Current R
q
JC
(Notes 1, 2, 3
and 4)
T
C
= 25°C
I
D
127
A
Continuous Drain
Current R
q
JC
(Notes 1, 2, 3
and 4)
T
C
= 80°C 101
Power Dissipation
R
q
JC
(Notes 1, 2, 3
and 4)
T
C
= 25°C P
D
79 W
Pulsed Drain
Current
T
A
= 25°C, t
p
= 10 ms
I
DM
174 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
−55 to
+175
°C
Source Current (Body Diode) I
S
72 A
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, I
L
= 29 A
pk
, L = 0.1 mH)
E
AS
42 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using 650 mm
2
, 2 oz Cu pad.
3. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
4. Continuous DC current rating. Maximum current for pulses as long as one
second is higher but dependent on pulse duration and duty cycle.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
www.onsemi.com
4C05N = Specific Device Code for
NVMFS4C05N
4C05WF= Specific Device Code of
NVMFS4C05NWF
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
4C05xx
AYWZZ
1
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
2.8 mW @ 10 V
127 A
4.0 mW @ 4.5 V
N−CHANNEL MOSFET
Device Package Shipping
†
ORDERING INFORMATION
NVMFS4C05NT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Ree
l
NVMFS4C05NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
G (4)
S (1,2,3)
D (5−8)
NVMFS4C05NWFT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Ree
l
NVMFS4C05NWFT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Ree
l
NVMFS4C05N
www.onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
1.9
°C/W
Junction−to−Ambient – Steady State (Note 5)
R
q
JA
41.6
5. Surface−mounted on FR4 board using 650 mm
2
, 2 oz Cu pad.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
12
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C 1.0
mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.3 2.2 V
Threshold Temperature Coefficient V
GS(TH)
/T
J
−5.1 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 30 A 2.3 2.8
mW
V
GS
= 4.5 V I
D
= 30 A 3.3 4.0
Forward Transconductance g
FS
V
DS
= 1.5 V, I
D
= 15 A 68 S
Gate Resistance R
G
T
A
= 25°C 0.3 1.0 2.0
W
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
1972
pF
Output Capacitance C
OSS
1215
Reverse Transfer Capacitance C
RSS
59
Capacitance Ratio C
RSS
/C
ISS
V
GS
= 0 V, V
DS
= 15 V, f = 1 MHz 0.030
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
14
nC
Threshold Gate Charge Q
G(TH)
3.3
Gate−to−Source Charge Q
GS
6.0
Gate−to−Drain Charge Q
GD
5.0
Gate Plateau Voltage V
GP
3.1
V
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V; I
D
= 30 A 30 nC
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
11
ns
Rise Time t
r
32
Turn−Off Delay Time t
d(OFF)
21
Fall Time t
f
7.0
Turn−On Delay Time t
d(ON)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
8.0
ns
Rise Time t
r
26
Turn−Off Delay Time t
d(OFF)
26
Fall Time t
f
5.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C 0.77 1.1
V
T
J
= 125°C 0.62
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 30 A
40.2
ns
Charge Time t
a
20.3
Discharge Time t
b
19.9
Reverse Recovery Charge Q
RR
30.2
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
NVMFS4C05N
www.onsemi.com
3
TYPICAL CHARACTERISTICS
10 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
53210
0
20
40
60
30
70
4.03.53.02.01.51.0
Figure 3. On−Resistance vs. V
GS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
9.08.07.0 106.05.04.03.0
1
3
5
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
30252015105
10
100
1000
10000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
90
10
4 V
3.6 V
3.2 V
3.0 V
2.8 V
2.6 V
3.8 V
T
J
= 25°C
V
DS
= 5 V
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
4
I
D
= 30 A
T
J
= 25°C
V
GS
= 4.5 V
T
J
= 25°C
V
GS
= 10 V
I
D
= 30 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 85°C
T
J
= 150°C
T
J
= 125°C
2.5
2
7
6
50
8
80
3.4 V
110
120
140
100
130
4
0
20
40
60
30
70
90
10
50
80
110
120
140
100
130
4.50.50
10
12
11
9
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
−50 −25 0 25 50 75 100 125 150 175
4.5 V
4.2 V
12010080 1406040200
1
3
5
4
2
7
6
8
10
12
11
9
P1-P3P4-P6

NVMFS4C05NWFT1G

Mfr. #:
Buy NVMFS4C05NWFT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8FL 30V 116A 3.4MO
Lifecycle:
New from this manufacturer.
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