NVMFS4C05NWFT1G

NVMFS4C05N
www.onsemi.com
4
TYPICAL CHARACTERISTICS
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1 1 10 100
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Q
g
, TOTAL GATE CHARGE (nC)
25201510 3050
0
250
1000
1250
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.80.70.60.50.4
0
2
4
6
8
10
12
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
V
GS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
rss
Q
T
Q
gs
Q
gd
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t
d(off)
t
d(on)
t
r
t
f
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V
0 V < V
GS
< 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
1750
2500
500
750
1500
2000
2250
3000
2750
1.0
0
2
4
6
8
10
0 4 8 121620242832
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
14
16
18
20
10 ms
NVMFS4C05N
www.onsemi.com
5
TYPICAL CHARACTERISTICS
1
10
100
1000
1.E−06 1.E−05 1.E−04 1.E−03
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 12. Thermal Response
PULSE TIME (sec)
R(t) (°C/W)
10%
Duty Cycle = 50%
20%
5%
2%
1%
Single Pulse
Figure 13. G
FS
vs. I
D
I
D
(A)
4030100
0
20
100
G
FS
(S)
20 50
40
60 80
60
80
120
70
Figure 14. Avalanche Characteristics
PULSE WIDTH (SECONDS)
I
D
, DRAIN CURRENT (A)
T
A
= 25°C
T
A
= 85°C
NVMFS4C05N
www.onsemi.com
6
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M 3.00 3.40
q 0 −−−
_
3.80
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
q
D
E
2
2
B
A
0.20
C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A 0.90 1.00
A1 0.00 −−−
b 0.33 0.41
c 0.23 0.28
D 5.15
D1 4.70 4.90
D2 3.80 4.00
E 6.15
E1 5.70 5.90
E2 3.45 3.65
e 1.27 BSC
G 0.51 0.575
K 1.20 1.35
L 0.51 0.575
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05
c
L
DETAIL A
A1
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.5600.495
3.200
1.330
0.965
2X
2X
4X
4X
PIN 5
(EXPOSED PAD)
5.00 5.30
6.00 6.30
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
e
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NVMFS4C05NWFT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8FL 30V 116A 3.4MO
Lifecycle:
New from this manufacturer.
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