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PHX14NQ20T,127

P1-P3P4-P6P7-P9
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHX14NQ20T , PHF14NQ20T
FEATURES SYMBOL QUICK REFERENCE DATA
• ’Trench’ technology
• Low on-state resistance V
DSS
= 200 V
• Fast switching
I
D
= 7.6 A
R
DS(ON)
≤ 230 mΩ
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology.
The device has very low on-state resistance. It is intended for use in dcto dc converters and general purpose switching
applications.
The PHX14NQ20T is supplied in the SOT186A (FPAK) conventional leaded package.
PINNING SOT186A (FPAK) SOT186 (FPAK)
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
Drain-source voltage T
j
= 25 ˚C to 150˚C - 200 V
V
DGR
Drain-gate voltage T
j
= 25 ˚C to 150˚C; R
GS
= 20 kΩ - 200 V
V
GS
Gate-source voltage - ± 20 V
I
D
Continuous drain current T
hs
= 25 ˚C; V
GS
= 10 V - 7.6 A
T
hs
= 100 ˚C; V
GS
= 10 V - 4.8 A
I
DM
Pulsed drain current T
hs
= 25 ˚C - 30 A
P
D
Total power dissipation T
hs
= 25 ˚C - 30 W
T
j
, T
stg
Operating junction and - 55 150 ˚C
storage temperature
d
g
s
123
case
123
case
November 2000 1 Rev 1.100
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHX14NQ20T , PHF14NQ20T
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
AS
Non-repetitive avalanche Unclamped inductive load, I
AS
= 14 A; - 70 mJ
energy t
p
= 38 µs; T
j
prior to avalanche = 25˚C;
V
DD
≤ 25 V; R
GS
= 50 Ω; V
GS
= 10 V; refer
to fig 15
I
AS
Peak non-repetitive - 14 A
avalanche current
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction - - 4.17 K/W
to mounting base
R
th j-a
Thermal resistance junction SOT186A package, in free air - 55 - K/W
to ambient
ELECTRICAL CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown V
GS
= 0 V; I
D
= 0.25 mA; 200 - - V
voltage T
j
= -55˚C 178 - - V
V
GS(TO)
Gate threshold voltage V
DS
= V
GS
; I
D
= 1 mA 2 3 4 V
T
j
= 150˚C 1 - - V
T
j
= -55˚C - - 6 V
R
DS(ON)
Drain-source on-state V
GS
= 10 V; I
D
= 7 A - 150 230 mΩ
resistance V
GS
= 10 V; I
D
= 7 A; T
j
= 150˚C - - 540 mΩ
g
fs
Forward transconductance V
DS
= 25 V; I
D
= 7 A 6 12.1 - S
I
GSS
Gate source leakage current V
GS
= ± 10 V; V
DS
= 0 V - 10 100 nA
I
DSS
Zero gate voltage drain V
DS
= 200 V; V
GS
= 0 V - 0.05 10 µA
current T
j
= 150˚C - - 500 µA
Q
g(tot)
Total gate charge I
D
= 14 A; V
DD
= 160 V; V
GS
= 10 V - 38 - nC
Q
gs
Gate-source charge - 4 - nC
Q
gd
Gate-drain (Miller) charge - 13.3 - nC
t
d on
Turn-on delay time V
DD
= 100 V; R
D
= 10 Ω; - 25 - ns
t
r
Turn-on rise time V
GS
= 10 V; R
G
= 5.6 Ω -40-ns
t
d off
Turn-off delay time Resistive load - 83 - ns
t
f
Turn-off fall time - 31 - ns
L
d
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
L
s
Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
C
iss
Input capacitance V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz - 1500 - pF
C
oss
Output capacitance - 128 - pF
C
rss
Feedback capacitance - 60 - pF
November 2000 2 Rev 1.100
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHX14NQ20T , PHF14NQ20T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
Continuous source current - - 14 A
(body diode)
I
SM
Pulsed source current (body - - 56 A
diode)
V
SD
Diode forward voltage I
F
= 14 A; V
GS
= 0 V - 1.0 1.5 V
t
rr
Reverse recovery time I
F
= 14 A; -dI
F
/dt = 100 A/µs; - 135 - ns
Q
rr
Reverse recovery charge V
GS
= 0 V; V
R
= 30 V - 690 - nC
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
R.M.S. isolation voltage from all SOT186A package; f = 50-60 Hz; - 2500 V
three terminals to external sinusoidal waveform; R.H. ≤ 65%;
heatsink clean and dustfree
V
isol
Repetitive peak voltage from all SOT186 package; R.H. ≤ 65%; - 1500 V
three terminals to external clean and dustfree
heatsink
C
isol
Capacitance from pin 2 to f = 1 MHz - 10 - pF
external heatsink
November 2000 3 Rev 1.100
P1-P3P4-P6P7-P9

PHX14NQ20T,127

Mfr. #:
Buy PHX14NQ20T,127
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 200V 7.6A TO220F
Lifecycle:
New from this manufacturer.
Delivery:
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