OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PHX14NQ20T,127

P1-P3P4-P6P7-P9
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHX14NQ20T , PHF14NQ20T
Fig.1. Normalised power dissipation.
PD% = 100⋅P
D
/P
D 25 ˚C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100⋅I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
≥ 10 V
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); parameter V
GS
0 20 40 60 80 100 120 140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0.01
0.1
1
10
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
Pulse width, tp (s)
Transient thermal impedance, Zth j-a (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
0 20 40 60 80 100 120 140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
5
10
15
20
25
30
012345678910
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
VGS=4.5
5 V
5.5
6 V
10V
6.5V
15V
0.1
1
10
100
1000
1 10 100 1000
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
D.C.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100us
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
01020
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS =20 V
5.5V
6.5V
6V
5V
4.5V
10V
November 2000 4 Rev 1.100
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHX14NQ20T , PHF14NQ20T
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 7 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
4
8
12
16
20
24
28
0246810
Gate-source voltage, VGS (V)
Drain current, ID (A)
Tj = 25 C
150 C
VGS(TO) / V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-100 -50 0 50 100 150
Tj / C
m
ax
t
yp
min
0
5
10
15
20
0 4 8 12 16 20 24 28
ID / (A)
Transconductance, gfs (S)
012345
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
typ
2%
98%
Rds(on) normalised to 25 deg C
0.5
1
1.5
2
2.5
-70 -20 30 80 130
Ths / deg C
a
10
100
1000
10000
0 10203040
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
November 2000 5 Rev 1.100
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHX14NQ20T , PHF14NQ20T
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 14 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Maximum permissible non-repetitive
avalanche current (I
AS
) versus avalanche time (t
AV
);
unclamped inductive load
0
2
4
6
8
10
12
14
0 10203040
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
VDD = 160 V
VDD = 40 V
0.1
1
10
100
0.001 0.01 0.1 1 10
Avalanche time, t
AV
(ms)
Maximum Avalanche Current, I
AS
(A)
Tj prior to avalanche = 150 C
25 C
0
10
20
30
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
VGS = 0 V
November 2000 6 Rev 1.100
P1-P3P4-P6P7-P9

PHX14NQ20T,127

Mfr. #:
Buy PHX14NQ20T,127
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 200V 7.6A TO220F
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet