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EL5130IS

P1-P3P4-P6P7-P9P10-P12
1
®
FN7381.5
EL5130, EL5131
300MHz Low Noise Amplifiers
The EL5130 and EL5131 are ultra-low voltage noise, high
speed voltage feedback amplifiers that are ideal for
applications requiring low voltage noise, including
communications and imaging. These devices offer extremely
low power consumption for exceptional noise performance.
Stable at gains as low as 5, these devices offer 100mA of
drive performance. Not only do these devices find perfect
application in high gain applications, they maintain their
performance down to lower gain settings.
These amplifiers are available in small package options
(SOT-23) as well as the industry-standard SOIC packages.
All parts are specified for operation over the -40°C to +85°C
temperature range.
Features
• 300MHz -3dB bandwidth
• Ultra low noise = 1.8nV/√Hz
• 350V/µs slew rate
• Low supply current = 4mA
• Single supplies from 5V to 12V
• Dual supplies from ±2.5V to ±6V
• Fast disable on the EL5130
•Low cost
• Pb-free plus anneal available (RoHS compliant)
Applications
•Imaging
• Instrumentation
• Communications devices
Pinouts
EL5130
(8 LD SOIC)
TOP VIEW
EL5131
(5 LD SOT-23)
TOP VIEW
Ordering Information
PART NUMBER
PART
MARKING
TAPE &
REEL PACKAGE
PKG.
DWG. #
EL5130IS 5130IS - 8 Ld SOIC
(150 mil)
MDP0027
EL5130ISZ
(Note)
5130ISZ - 8 Ld SOIC
(150 mil)
(Pb-free)
MDP0027
EL5130IS-T7 5130IS 7” 8 Ld SOIC
(150 mil)
MDP0027
EL5130ISZ-T7
(Note)
5130ISZ 7” 8 Ld SOIC
(150 mil)
(Pb-free)
MDP0027
EL5130IS-T13 5130IS 13” 8 Ld SOIC
(150 mil)
MDP0027
EL5130ISZ-T13
(Note)
5130ISZ 13” 8 Ld SOIC
(150 mil)
(Pb-free)
MDP0027
EL5131IW-T7 BBAA 7”
(3k pcs)
5 Ld SOT-23 P5.064A
EL5131IWZ-T7
(Note)
BRAA 7”
(3k pcs)
5 Ld SOT-23
(Pb-free)
P5.064A
EL5131IW-T7A BBAA 7”
(250 pcs)
5 Ld SOT-23 P5.064A
EL5131IWZ-T7A
(Note)
BRAA 7”
(250 pcs)
5 Ld SOT-23
(Pb-free)
P5.064A
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
1
2
3
4
8
7
6
5
-
+
NC
IN-
IN+
VS-
CE
VS+
OUT
NC
1
2
3
5
4
-+
OUT
VS-
IN+
VS+
IN-
Data Sheet May 28, 2010
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
| Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2003, 2004, 2006, 2007, 2010. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
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5
5
1
9
0
2
FN7381.5
May 28, 2010
Absolute Maximum Ratings (T
A
= +25°C) Thermal Information
Slewrate between V
S
+ and V
S
-. . . . . . . . . . . . . . . . . . . . . . . . 1V/µs
Supply Voltage from V
S
+ to V
S
- . . . . . . . . . . . . . . . . . . . . . . . 13.2V
I
IN
-, I
IN
+, CE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mA
Continuous Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +125°C
Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +125°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
Electrical Specifications V
S
+ = +5V, V
S
- = -5V, R
L
= 500Ω, R
G
= 50Ω, C
L
= 5pF, T
A
= +25°C, Unless Otherwise Specified.
PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT
V
OS
Offset Voltage -0.9 0.2 0.9 mV
T
C
V
OS
Offset Voltage Temperature Coefficient Measured from T
MIN
to T
MAX
0.8 µV/°C
IB Input Bias Current V
IN
= 0V 1.5 2.27 3.3 µA
I
OS
Input Offset Current V
IN
= 0V -500 100 500 nA
T
C
I
OS
Input Bias Current Temperature
Coefficient
Measured from T
MIN
to T
MAX
-3 nA/°C
PSRR Power Supply Rejection Ratio V
S
= ±4.75V to ±5.25V 75 90 dB
CMRR Common Mode Rejection Ratio V
IN
= ±3.0V 95 110 dB
CMIR Common Mode Input Range Guaranteed by CMRR test ±3 ±3.3 V
R
IN
Input Resistance Common mode 5 20 MΩ
C
IN
Input Capacitance 1pF
I
S
Supply Current 3.0 3.54 4.1 mA
AVOL Open Loop Gain V
OUT
= ±2.5V, R
L
= 1kΩ to GND 10 16 kV/V
V
O
Output Voltage Swing R
L
= 1kΩ, R
F
= 900Ω, R
G
= 100Ω ±3.5 ±3.8 V
R
L
= 150Ω ±3.5 ±3.3 V
I
SC
Short Circuit Current R
L
= 10Ω 50 100 mA
BW -3dB Bandwidth A
V
= +5, R
L
= 500Ω 300 MHz
BW ±0.1dB Bandwidth A
V
= +5, R
L
= 500Ω 60 MHz
GBWP Gain Bandwidth Product 1500 MHz
PM Phase Margin R
L
= 1kΩ, C
L
= 6pF 55 °
SR Slew Rate V
S
= ±5V, R
L
= 150Ω, V
OUT
= ±2.5V 225 350 V/µs
t
R
, t
F
Rise Time, Fall Time ±0.1V
STEP
TBD ns
t
PD
Propagation Delay ±0.1V
STEP
TBD ns
t
S
0.01% Settling Time 14 ns
dG Differential Gain A
V
= +2, R
F
= 1kΩ 0.01 %
dP Differential Phase A
V
= +2, R
F
= 1kΩ 0.01 °
e
N
Input Noise Voltage f = 10kHz 1.8 nV/√Hz
i
N
Input Noise Current f = 10kHz 1.1 pA/√Hz
EL5130, EL5131
3
FN7381.5
May 28, 2010
Typical Performance Curves
FIGURE 1. OPEN LOOP GAIN AND PHASE vs FREQUENCY FIGURE 2. GAIN AND PHASE vs FREQUENCY (INVERTING)
FIGURE 3. GAIN AND PHASE vs FREQUENCY
(NON-INVERTING)
FIGURE 4. GAIN vs FREQUENCY FOR VARIOUS A
V
+
FIGURE 5. PHASE vs FREQUENCY FOR VARIOUS A
V
+ FIGURE 6. GAIN vs FREQUENCY FOR VARIOUS R
L
(A
V
=+5)
1k 10k 100k 1M 10M 100M 500M
90
70
50
30
10
-10
0
72
288
360
144
216
FREQUENCY (Hz)
MAGNITUDE (dB)
PHASE (°)
V
S
=±5V
0.1 1 10 100 1k
5
3
1
-1
-3
-5
300
180
-180
-300
60
-60
FREQUENCY (MHz)
NORMALIZED GAIN (dB)
PHASE (°)
V
S
=±5V
A
V
=-5
R
G
=50Ω
R
L
=500Ω
C
L
=5pF
PHASE
GAIN
0.1 1 10 100 1k
5
3
1
-1
-3
-5
300
180
-180
-300
60
-60
FREQUENCY (MHz)
NORMALIZED GAIN (dB)
PHASE (°)
V
S
=±5V
A
V
=+5
R
G
=50Ω
R
L
=500Ω
C
L
=5pF
PHASE
GAIN
0.1 1 10 100 1k
5
3
1
-1
-3
-5
FREQUENCY (MHz)
NORMALIZED GAIN (dB)
V
S
=±5V
R
G
=50Ω
R
L
=500Ω
C
L
=5pF
A
V
=+5
A
V
=+20
A
V
=+10
0.1 1 10 100 1k
300
180
60
-60
-180
-300
FREQUENCY (MHz)
NORMALIZED GAIN (dB)
V
S
=±5V
R
G
=50Ω
R
L
=500Ω
C
L
=5pF
A
V
=+5
A
V
=+20
A
V
=+10
0.1 1 10 100 1k
5
3
1
-1
-3
-5
FREQUENCY (MHz)
NORMALIZED GAIN (dB)
V
S
=±5V
A
V
=+5
R
G
=50Ω
C
L
=5pF
R
L
=1kΩ
R
L
=100Ω
R
L
=500Ω
R
L
=150Ω
EL5130, EL5131
P1-P3P4-P6P7-P9P10-P12

EL5130IS

Mfr. #:
Buy EL5130IS
Manufacturer:
Renesas / Intersil
Description:
IC OPAMP VFB 1 CIRCUIT 8SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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