NDH8304P Datasheet NDH8304P | P1-P3

May 1997

NDH8304P

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description Features

___________________________________________________________________________________________

Absolute Maximum Ratings T

A

= 25°C unless otherwise noted

Symbol Parameter

NDH8304P

Units

V

DSS

Drain-Source Voltage -20 V

V

GSS

Gate-Source Voltage ±8 V

I

D

Drain Current - Continuous (Note 1) -2.7 A

- Pulsed -10

P

D

Maximum Power Dissipation (Note 1) 0.8 W

T

J

,T

STG

Operating and Storage Temperature Range -55 to 150 °C

THERMAL CHARACTERISTICS

R

θJA

Thermal Resistance, Junction-to-Ambient (Note 1) 156 °C/W

R

θJC

Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

NDH8304P Rev.C

SuperSOT

TM

-8 P-Channel enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage

applications such as notebook computer power management

and other battery powered circuits where fast high-side

switching, and low in-line power loss are needed in a very small

outline surface mount package.

-2.7 A, -20 V. R

DS(ON)

= 0.07 Ω @ V

GS

= -4.5 V

R

DS(ON)

= 0.095 Ω @ V

GS

= -2.7 V.

Proprietary SuperSOT

TM

-8 package design using copper

lead frame for superior thermal and electrical capabilities.

High density cell design for extremely low R

DS(ON)

.

Exceptional on-resistance and maximum DC current

capability.

1

5

7

8

2

6

3

4

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage V

GS

= 0 V, I

D

= -250 µA -20 V

I

DSS

Zero Gate Voltage Drain Current

V

DS

= -16 V, V

GS

= 0 V

-1 µA

T

J

= 55°C

-10 µA

I

GSSF

Gate - Body Leakage, Forward V

GS

= 8 V, V

DS

= 0 V 100 nA

I

GSSR

Gate - Body Leakage, Reverse

V

GS

= -8 V, V

DS

= 0 V

-100 nA

ON CHARACTERISTICS (Note 2)

V

GS(th)

Gate Threshold Voltage V

DS

= V

GS

, I

D

= - 250 µA -0.4 -0.7 -1 V

T

J

= 125°C

-0.3 -0.5 -0.8

R

DS(ON)

Static Drain-Source On-Resistance V

GS

= -4.5 V, I

D

= -2.7 A 0.061 0.07

Ω

T

J

= 125°C

0.087 0.125

V

GS

= -2.7 V, I

D

= -2.3 A

0.082 0.095

I

D(on)

On-State Drain Current

V

GS

= -4.5 V, V

DS

= -5 V

-10 A

V

GS

= -2.7 V, V

DS

= -5 V

-3

g

FS

Forward Transconductance

V

DS

= -5 V, I

D

= -2.7 A

8 S

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance V

DS

= -10 V, V

GS

= 0 V,

f = 1.0 MHz

865 pF

C

oss

Output Capacitance 415 pF

C

rss

Reverse Transfer Capacitance 150 pF

SWITCHING CHARACTERISTICS (Note 2)

t

D(on)

Turn - On Delay Time

V

DD

= -5 V, I

D

= -1 A,

V

GS

= -4.5 V, R

GEN

= 6 Ω

11 22 ns

t

r

Turn - On Rise Time 25 50 ns

t

D(off)

Turn - Off Delay Time 78 150 ns

t

f

Turn - Off Fall Time 55 100 ns

Q

g

Total Gate Charge

V

DS

= -10 V,

I

D

= -2.7 A, V

GS

= -4.5 V

16 23 nC

Q

gs

Gate-Source Charge 2.4 nC

Q

gd

Gate-Drain Charge 5.1 nC

NDH8304P Rev.C

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current -0.67 A

V

SD

Drain-Source Diode Forward Voltage

V

GS

= 0 V, I

S

= -0.67 A (Note 2)

-0.7 -1.2 V

Notes:

1. R

θ

JA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

θ

JC

is guaranteed by

design while R

θ

CA

is determined by the user's board design.

P

D

(

t

)

=

T

J

−T

A

R

θJA

(t)

=

T

J

−T

A

R

θ

JC

+R

θ

CA

(t)

= I

D

2

(t) ×R

DS(ON ) T

J

Typical R

θ

JA

using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

156

o

C/W when mounted on a 0.0025 in

2

pad of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDH8304P Rev.C

NDH8304P

NDH8304P

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