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NDH8304P

P1-P3P4-P6
NDH8304P Rev.C
Typical Electrical Characteristics
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
-4-3-2-10
-15
-12
-9
-6
-3
0
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
DS
D
-3.5
-2.0
-3.0
-2.5
-1.5
V =-4.5V
GS
-2.7
-15-12-9-6-30
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
-2.7
-4.5
-2.5
-3.0
-3.5
V = -2.0V
GS
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = -4.5V
GS
I = -2.7A
D
-2.5-2-1.5-1-0.5
-8
-6
-4
-2
0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = -5V
DS
GS
D
T = -55°C
J
125°C
25°C
-50 -25 0 25 50 75 100 125 150
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE
J
V , NORMALIZED
GS(th)
I = -250µA
D
V = V
GS
DS
-15-12-9-6-30
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZEDDS(on)
V = -4.5V
GS
T = 125°C
J
25°C
-55°C
NDH8304P Rev.C
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature.
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Typical Electrical Characteristics
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
-50 -25 0 25 50 75 100 125 150
0.94
0.96
0.98
1
1.02
1.04
1.06
1.08
1.1
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = -250µA
D
J
BV , NORMALIZED
DSS
0.1 0.2 0.5 1 2 5 10 20
100
200
300
500
1000
1500
2500
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0 V
GS
C
oss
C
rss
0 5 10 15 20
0
1
2
3
4
5
Q , GATE CHARGE (nC)
-V , GATE-SOURCE VOLTAGE (V)
V = -5V
DS
I = -2.7A
-15V
g
GS
-10V
D
0 0.2 0.4 0.6 0.8 1 1.2
0.0001
0.001
0.01
0.1
0.5
1
3
10
-V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
T = 125°C
J
25°C
-55°C
V = 0V
GS
SD
S
D
S
-V
DD
R
L
V
OUT
V
GS
DUT
V
IN
R
GEN
G
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
on off
d(off)
f
r
d(on)
t t
t
tt
t
INVERTED
10%
PULSE WIDTH
NDH8304P Rev.C
Figure 14. Maximum Safe Operating Area.
Typical Electrical and Thermal Characteristics
Figure 15. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1 .Transient thermal response will change
depending on the circuit board design.
Figure 13. Transconductance Variation with Drain
Current and Temperature.
-20-16-12-8-40
0
4
8
12
16
20
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
V = -4.5V
DS
T = -55°C
J
25°C
D
FS
125°C
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.01
0.1
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
R (t) = r(t) * R
R = See Note 1
θ
JA
θ
JA
θ
JA
T - T = P * R (t)
θ
JA
A
J
P(pk)
t
1
t
2
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
R (t) = r(t) * R
R = See Note 1
θ
JA
θ
JA
θ
JA
T - T = P * R (t)
θ
JA
A
J
P(pk)
t
1
t
2
0.1 0.2 0.5 1 2 5 10 20 30
0.01
0.05
0.1
0.5
1
2
5
10
15
- V , DRAIN-SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
RDS(ON) LIMIT
D
A
DC
DS
1s
100ms
10ms
1ms
10s
V = -4.5V
SINGLE PULSE
R = See Note 1
T = 25°C
θ
JA
GS
A
P1-P3P4-P6

NDH8304P

Mfr. #:
Buy NDH8304P
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET Dual P-Ch FET Enhancement Mode
Lifecycle:
New from this manufacturer.
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