CY7C199CN
Document Number: 001-06435 Rev. *J Page 4 of 17
Truth Table
CE OE WE IOx Mode Power
H X X High-Z Deselect/Power-down Stand by (I
SB
)
L L H Data Out Read Active (I
CC
)
L X L Data In Write Active (I
CC
)
L H H High-Z Selected, Outputs disabled Active (I
CC
)
CY7C199CN
Document Number: 001-06435 Rev. *J Page 5 of 17
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested.
Parameter
[2]
Description Value Unit
T
STG
Storage temperature –65 to +150 °C
T
AMB
Ambient temperature with power applied (that is, case temperature) –55 to +125 °C
V
CC
Core Supply voltage relative to V
SS
–0.5 to +7.0 V
V
IN
, V
OUT
DC voltage applied to any pin relative to V
SS
–0.5 to V
CC
+ 0.5 V
I
OUT
Output short-circuit current 20 mA
V
ESD
Static discharge voltage (in accordance with MIL-STD-883, Method 3015) > 2001 V
I
LU
Latch-up current > 200 mA
Operating Range
Range Ambient Temperature (T
A
) Voltage Range (V
CC
)
Commercial 0 °C to 70 °C 5.0 V ± 10%
Industrial –40 °C to 85 °C 5.0 V ± 10%
DC Electrical Characteristics
Over the Operating Range
Parameter
[2]
Description Condition
-15
Unit
Min Max
V
IH
Input HIGH voltage 2.2 V
CC
+ 0.3 V
V
IL
Input LOW voltage –0.5 0.8 V
V
OH
Output HIGH voltage V
CC
= Min, I
OH
= –4.0 mA 2.4 V
V
OL
Output LOW voltage V
CC
= Min, I
OL
= 8.0 mA 0.4 V
I
CC
V
CC
Operating supply current V
CC
= Max, I
OUT
= 0 mA,
f = F
max
= 1/t
RC
–80mA
I
SB1
Automatic CE power-down
current – TTL inputs
Max V
CC
, CE t V
IH
,
V
IN
t V
IH
or V
IN
d V
IL
, f = F
max
–30mA
L–10mA
I
SB2
Automatic CE power-down
current – CMOS Inputs
Max V
CC
, CE t V
CC
– 0.3 V,
V
IN
t V
CC
– 0.3 V, or V
IN
d 0.3 V, f = 0
–10mA
L–500PA
I
OZ
Output leakage current GND d V
I
d V
CC
, output disabled –5 +5 PA
I
IX
Input leakage current GND d V
I
d V
CC
–5 +5 PA
Note
2. V
IL
(min) = –2.0 V for pulse durations of less than 20 ns.
CY7C199CN
Document Number: 001-06435 Rev. *J Page 6 of 17
Capacitance
Parameter
[3]
Description Conditions Max Unit
C
IN
Input capacitance T
A
= 25 °C, f = 1 MHz, V
CC
= 5.0 V 8 pF
C
OUT
Output capacitance 8
Thermal Resistance
Parameter
[3]
Description Conditions SOJ DIP Unit
T
JA
Thermal resistance
(junction to ambient)
Still air, soldered on a 3 × 4.5 square inch,
two–layer printed circuit board
79 69.33 °C/W
T
JC
Thermal resistance
(junction to case)
41.42 31.62
AC Test Loads
Figure 1. AC Test Loads
V
CC
V
SS
Rise Time
1 V/ns
Fall Time
1 V/ns
All Input Pulses
90%
10%
90%
10%
V
Output
R1
R2C1
CC
V
Output
R3
C2
CC
R4
O u tput Load s
Output Loads
for t
HZOE
,t
HZCE
&t
HZWE
* including scope and jig capacitance
(B)*
(A)*
R
th
T
V
Thevenin Equivalent
AC Test Conditions
Parameter Description Nom Unit
C1 Capacitor 1 30 pF
C2 Capacitor 2 5
R1 Resistor 1 480 :
R2 Resistor 2 255
R3 Resistor 3 480
R4 Resistor 4 255
R
TH
Resistor Thevenin 167
V
TH
Voltage Thevenin 1.73 V
Note
3. Tested initially and after any design or process change that may affect these parameters.

CY7C199CNL-15VXI

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 256Kb 15ns 32K x 8 SRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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