CBTU4411 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 4 — 18 June 2012 10 of 21
NXP Semiconductors
CBTU4411
11-bit DDR2 SDRAM MUX/bus switch with 12 Ω ON resistance
10. Dynamic characteristics
[1] This parameter is not production tested.
[2] Skew is not production tested.
[3] Difference of rising edge propagation delay to falling edge propagation delay.
Fig 6. Pull-down resistance versus voltage
350
425
400
375
450
R
PD
(Ω)
V
DIMM
− V
bias
(V)
0 0.80.60.2 0.4
002aae863
Table 9. Dynamic characteristics
V
DD
=1.8V
±
0.1 V.
Symbol Parameter Conditions Min Typ Max Unit
t
PD
propagation delay from HPn or xDPn to xDPn or HPn;
Figure 9, Figure 13
[1]
-50100ps
t
PZH
driver enable delay to HIGH level from Sn to HPn or xDPn 0.75 - 1.75 ns
t
PZL
driver enable delay to LOW level from Sn to HPn or xDPn 0.75 - 1.75 ns
t
PHZ
driver disable delay from HIGH level from Sn to HPn or xDPn 0.75 - 1.75 ns
t
PLZ
driver disable delay from LOW level from Sn to HPn or xDPn 0.75 - 1.75 ns
t
sk(o)
output skew time from any output to any output;
Figure 12
[2]
-2530ps
t
sk(edge)
edge skew time Figure 11
[2][3]
-2530ps