CBTU4411 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 4 — 18 June 2012 8 of 21
NXP Semiconductors
CBTU4411
11-bit DDR2 SDRAM MUX/bus switch with 12 Ω ON resistance
7. Limiting values
[1] The input and output negative voltage ratings may be exceeded if the input and output clamping current
ratings are observed.
8. Recommended operating conditions
[1] V
bias
>0.5× V
DD
is reserved for test purposes only.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
The package thermal impedance is calculated in accordance with JESD 51.
Symbol Parameter Conditions Min Max Unit
V
DD
supply voltage −0.5 +2.5 V
I
IK
input clamping current V
I/O
<0V - −50 mA
V
I
input voltage S0, S1 pins only
[1]
-V
DD
+0.3 V
except S0, S1 pins
[1]
−0.5 +2.5 V
T
stg
storage temperature −65 +150 °C
Table 7. Operating conditions
All unused control inputs of the device must be held at V
DD
or GND to ensure proper device operation.
Symbol Parameter Conditions Min Typ Max Unit
V
DD
supply voltage 1.7 - 1.9 V
V
ref
reference voltage 0.49 × V
DD
0.50 × V
DD
0.51 × V
DD
V
V
bias
bias voltage pull-down resistor input
[1]
00.30× V
DD
0.33 × V
DD
V
V
T
termination voltage V
ref
− 0.04 V
ref
V
ref
+0.04 V
V
i
input voltage 0 - V
DD
V
V
IH(AC)
AC HIGH-level input voltage S0, S1 inputs V
ref
+0.250--V
V
IL(AC)
AC LOW-level input voltage S0, S1 inputs - - V
ref
− 0.250 V
V
IH(DC)
DC HIGH-level input voltage S0, S1 inputs V
ref
+0.125--V
V
IL(DC)
DC LOW-level input voltage S0, S1 inputs - - V
ref
− 0.125 V
V
IH
HIGH-level input voltage EN, STREN, TERM pins 0.65 × V
DD
--V
V
IL
LOW-level input voltage EN, STREN, TERM pins - - 0.35 × V
DD
V
T
amb
ambient temperature operating in free air 0 - +85 °C
