IXTQ64N25P Datasheet IXTQ64N25P, IXTT64N25P | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25° C to 150° C 250 V

V

DGR

T

J

= 25° C to 150° C; R

GS

= 1 MΩ 250 V

V

GSS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25° C64A

I

DM

T

C

= 25° C, pulse width limited by T

JM

160 A

I

AR

T

C

= 25° C60A

E

AR

T

C

= 25° C40mJ

E

AS

T

C

= 25° C 1.0 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

, 10 V/ns

T

J

≤ 150° C, R

G

= 4 Ω

P

D

T

C

= 25° C 400 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

T

SOLD

Plastic body for 10 s 260 °C

M

d

Mounting torque (TO-3P) 1.13/10 Nm/lb.in.

Weight TO-3P 5.5 g

TO-268 5.0 g

G = Gate D = Drain

S = Source TAB = Drain

DS99120E(12/05)

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 250 µA 250 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250µA 2.5 5.0 V

I

GSS

V

GS

= ±20 V

DC

, V

DS

= 0 ±100 nA

I

DSS

V

DS

= V

DSS

25 µA

V

GS

= 0 V T

J

= 125° C 250 µA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

49 m Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

PolarHT

TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Features

l

International standard packages

l

Unclamped Inductive Switching (UIS)

rated

l

Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

TO-3P (IXTQ)

G

D

S

(TAB)

TO-268 (IXTT)

G

S

D (TAB)

IXTQ 64N25P

IXTT 64N25P

V

DSS

= 250 V

I

D25

= 64 A

R

DS(on)

≤ ≤

≤ 49 m

ΩΩ

Ω

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTQ 64N25P

IXTT 64N25P

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 10 V; I

D

= 0.5 I

D25

, pulse test 20 30 S

C

iss

3450 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 640 pF

C

rss

155 pF

t

d(on)

21 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= I

D25

23 ns

t

d(off)

R

G

= 4 Ω (External) 60 ns

t

f

20 ns

Q

g(on)

105 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

24 nC

Q

gd

53 nC

R

thJC

0.31° C/W

R

thCS

(TO-3P) 0.21 ° C/W

Source-Drain Diode Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 64 A

I

SM

Repetitive 160 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

F

= 25 A, -di/dt = 100 A/µs 200 ns

Q

RM

V

R

= 100 V, V

GS

= 0 V 3.0 µC

TO-268 (IXTT) Outline

TO-3P (IXTQ) Outline

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

IXTQ 64N25P

IXTT 64N25P

Fig. 2. Exte nded Output Characteristics

@ 25

º

C

0

20

40

60

80

100

120

140

160

180

02468101214161820

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

9V

7V

6V

8V

5V

Fig. 3. Output Characte ristics

@ 125

º

C

0

8

16

24

32

40

48

56

64

012345678

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

5V

6V

7V

Fig. 1. Output Characte ristics

@ 25

º

C

0

8

16

24

32

40

48

56

64

0 0.5 1 1.5 2 2.5 3 3.5 4

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

7V

6V

5V

Fig. 4. R

DS(on

)

Norm alized to 0.5 I

D25

Value vs . Junction Tem perature

0.4

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

D S ( o n )

- Normalized

I

D

= 64A

I

D

= 32A

V

GS

= 10V

Fig. 6. Drain Current vs. Case

Tem perature

0

10

20

30

40

50

60

70

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 5. R

DS(on)

Norm alized to

0.5 I

D25

Value vs. I

D

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

3.4

3.7

0 30 60 90 120 150 180

I

D

- Amperes

R

D S ( o n )

- Normalized

T

J

= 125ºC

T

J

= 25ºC

V

GS

= 10V

IXTQ64N25P

IXTQ64N25P

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