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IXTQ64N25P

P1-P3P4-P5
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 64N25P
IXTT 64N25P
Fig. 11. Capacitance
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100110
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 125V
I
D
= 32A
I
G
= 10mA
Fig. 7. Input Admittance
0
15
30
45
60
75
90
105
120
44.5 55.5 66.5 77.5 8
V
G S
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
0153045607590105120135
I
D
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Curre nt vs.
Source-To-Drain Voltage
0
30
60
90
120
150
180
0.4 0.6 0.8 1 1.2 1.4
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. For w ar d-Bias
Safe Operating Area
1
10
100
1000
10 100 1000
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 150ºC
T
C
= 25ºCR
DS(on)
Limit
10ms
25µs
© 2006 IXYS All rights reserved
IXTQ 64N25P
IXTT 64N25P
Fig. 13. Maxim um Transient Therm al Resistance
0.01
0.10
1.00
1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC / W
P1-P3P4-P5

IXTQ64N25P

Mfr. #:
Buy IXTQ64N25P
Manufacturer:
Littelfuse
Description:
MOSFET 64 Amps 250V 0.049 Rds
Lifecycle:
New from this manufacturer.
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