TSM061NA03CV
Taiwan Semiconductor
1 Version: B1610
N-Channel Power MOSFET
30V, 66A, 6.1mΩ
FEATURES
● Low R
DS(ON)
to minimize conductive loss
● Low gate charge for fast power switching
● 100% UIS and R
g
tested
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● DC-DC Converters
● Battery Power Management
● ORing FET/Load Switching
KEY PERFORMANCE PARAMETERS
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Continuous Drain Current
(Note 1)
Single Pulse Avalanche Current
(Note 2)
Single Pulse Avalanche Energy
(Note 2)
Operating Junction and Storage Temperature Range
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
Thermal Performance Note: R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is
determined by the user’s board design.