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TSM061NA03CV RGG

P1-P3P4-P6
TSM061NA03CV
Taiwan Semiconductor
4 Version: B1610
0.8
0.9
1
1.1
1.2
-75 -50 -25 0 25 50 75 100 125 150
0
200
400
600
800
1000
1200
1400
1600
0 5 10 15 20 25 30
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
1
10
100
1000
0.1 1 10 100
I
D
, Drain Current (A)
V
DS
, Drain to Source Voltage (V)
R
DS(ON)
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Capacitance vs. Drain-Source Voltage
BV
DSS
vs. Junction Temperature
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance, Z
ӨJC
t, Square Wave Pulse Duration (sec)
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
C, Capacitance (pF)
V
DS
, Drain to Source Voltage (V)
BV
DSS
(Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature (°C)
CISS
COSS
CRSS
I
D
=1mA
SINGLE PULSE
R
ӨJC
=2.8°C/W
T
C
=25°C
SINGLE PULSE
R
ӨJC
=2.8°C/W
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
25℃
150℃
-55℃
I
S
, Reverse Drain Current (A)
V
SD
, Body Diode Forward Voltage (V)
Notes:
Duty = t
1
/ t
2
T
J
= T
C
+ P
DM
x Z
ӨJC
x R
ӨJC
TSM061NA03CV
Taiwan Semiconductor
5 Version: B1610
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
PDFN33
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
Y
= Year Code
M
= Month Code
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code (1~9, A~Z)
TSC
061NA03
YML
TSM061NA03CV
Taiwan Semiconductor
6 Version: B1610
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
P1-P3P4-P6

TSM061NA03CV RGG

Mfr. #:
Buy TSM061NA03CV RGG
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET Power MOSFET, N-CHL, 30V, 66A, 6.1mOhm
Lifecycle:
New from this manufacturer.
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