IRFR/U5410PbF
2 www.irf.com
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage -1.6 V T
J
= 25°C, I
S
= -7.8A, V
GS
= 0V
t
rr
Reverse Recovery Time 130 190 ns T
J
= 25°C, I
F
= -8.4A
Q
rr
Reverse Recovery Charge 650 970 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
-13
-52
A
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact
Starting T
J
= 25°C, L = 6.4mH
R
G
= 25Ω, I
AS
= -7.8A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ -7.8A, di/dt ≤ 200A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -100 V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient -0.12 V/°C Reference to 25°C, I
D
= -1.0mA
R
DS(on)
Static Drain-to-Source On-Resistance 0.205 Ω V
GS
= -10V, I
D
= -7.8A
V
GS(th)
Gate Threshold Voltage -2.0 -4.0 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 3.2 S V
DS
= -50V, I
D
= -7.8A
-25
µA
V
DS
= -100V, V
GS
= 0V
-250 V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage 100 V
GS
= 20V
Gate-to-Source Reverse Leakage -100
nA
V
GS
= -20V
Q
g
Total Gate Charge 58 I
D
= -8.4A
Q
gs
Gate-to-Source Charge 8.3 nC V
DS
= -80V
Q
gd
Gate-to-Drain ("Miller") Charge 32 V
GS
= -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time 15 V
DD
= 50V
t
r
Rise Time 58 I
D
= -8.4A
t
d(off)
Turn-Off Delay Time 45 R
G
= 9.1Ω
t
f
Fall Time 46 R
D
=6.2Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance 760 V
GS
= 0V
C
oss
Output Capacitance 260 pF V
DS
= -25V
C
rss
Reverse Transfer Capacitance 170 = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
G
Uses IRF9530N data and test conditions.
