TT8U1TR Datasheet TT8U1TR | P1-P3

1/5

www.rohm.com

○

c

2009.06 - Rev.A

(1) Anode

(2) Anode

(3) Source

(4) Gate

(5) Drain

(6) Drain

(7) Cathode

(8) Cathode

∗1 BODY DIODE

(8) (7)

(1) (2)

∗1

(6) (5)

(3) (4)

1.5V Drive Pch +SBD MOSFET

TT8U1

zStructure zDimensions (Unit : mm)

Silicon P-channel MOSFET / schottky barrier diode

zFeatures

1) Low On-resistance.

2) High Power Package.

3) Low voltage drive. (1.5V)

zApplications

Switching

zInner circuit

zPackaging specifications

Package

Code

Taping

Basic ordering unit (pieces)

TT8U1

TR

3000

Type

zAbsolute maximum ratings (Ta=25°C)

∗1

∗2

∗1

Parameter

VV

DSS

Symbol

VV

GSS

AI

D

AI

DP

AI

S

AI

SP

P

D

°CTch

Unit

Drain-source voltage

Gate-source voltage

Drain current

Channel temperature

Continuous

Pulsed

Continuous

Pulsed

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Source current

(Body diode)

−20

±10

±2.4

±9.6

−0.8

−9.6

W / ELEMENT1.0

150

Limits

Power dissipation

∗1

∗2

Parameter

VV

RM

Symbol

V

R

A

I

F

A

I

FSM

P

D

Unit

Repetitive peak reverse voltage

Reverse voltage

Forward current

Junction temperature

∗1 60HZ / 1Cycle

∗2 Mounted on a ceramic board

Forward current surge peak

30

20

1.0

3.0

W / ELEMENT1.0

Limits

°C

Tj 150

Power dissipation

<

Di>

∗

W / TOTAL

P

D

°CTstg

Total power dissipation

Range of Storage temperature

1.25

−55 to +150

Parameter Symbol Unit

Limits

<

MOSFET and Di>

∗ Mounted on a ceramic board

Each lead has same dimensions

(8) (7) (5)(6)

(1) (2) (4)(3)

Abbreviated symbol : U01

TSST8

TT8U1

Data Sheet

2/5

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○

c

2009.06 - Rev.A

zElectrical characteristics (Ta=25°C)

Parameter Symbol

I

GSS

Y

fs

Min. Typ. Max.

Unit

Conditions

V

(BR) DSS

I

DSS

V

GS (th)

R

DS (on)

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

g

Q

gs

Q

gd

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

∗Pulsed

−−±100 nA V

GS

=±10V, V

DS

=0V

V

DD

−10V

R

L

4.2Ω / R

G

=10Ω

−20 −−VI

D

= −1mA, V

GS

=0V

−−−1 µAV

DS

= −20V, V

GS

=0V

−0.3 −−1.0 V V

DS

= −10V, I

D

= −1mA

− 80 105 I

D

= −2.4A, V

GS

= −4.5V

− 105 140 mΩ

mΩ

I

D

= −1.2A, V

GS

= −2.5V

− 180 360 I

D

= −0.5A, V

GS

= −1.5V

mΩ− 150 225 I

D

= −1.2A, V

GS

= −1.8V

2.4 −−SV

DS

= −10V, I

D

= −2.4A

− 850 − pF V

DS

= −10V

− 60

50

− pF V

GS

=0V

−

9

− pF f=1MHz

−

25

− ns

−

55

− ns

−

45

− ns

−

6.7

− ns

−

1.7

− nC

−

0.6

− nC

V

GS

= −4.5V

−−nC

I

D

= −2.4A

VDD −10V

I

D

= −1.2A

R

L

8.3Ω

R

G

=10Ω

V

GS

= −4.5V

V

SD

−−−1.2 V I

S

= −2.4A, V

GS

=0VForward voltage

Parameter Symbol

Min. Typ. Max.

Unit

Conditions

<MOSFET> Body diode (source-drain)

Forward voltage drop

Reverse leakage

Parameter

<Di>

V

F

I

R

−

−−

0.410.37

500

V

I

F

= 1.0A

Symbol Min. Typ. Max. Unit Conditions

V

R

=20V

µA

∗Pulsed

∗

TT8U1

Data Sheet

3/5

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○

c

2009.06 - Rev.A

zElectrical characteristics curves

0

1

2

3

4

5

0 0.2 0.4 0.6 0.8 1

Ta=25°C

Pulsed

V

GS

= -1.5V

V

GS

= -1.4V

V

GS

= -10V

V

GS

= -4.5V

V

GS

= -2.5V

V

GS

= -1.8V

0.001

0.01

0.1

1

10

00.511.52

V

DS

= -10V

Pulsed

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

10

100

1000

0.1110

V

GS

= -1.5V

V

GS

= -1.8V

V

GS

= -2.5V

V

GS

= -4.5V

Ta=25°C

Pulsed

0

1

2

3

4

5

0246810

V

GS

= -10V

Ta=25°C

Pulsed

V

GS

= -4.5V

V

GS

= -2.5V

V

GS

= -1.8V

V

GS

= -1.5V

V

GS

= -1.4V

10

100

1000

0.1 1 10

V

GS

= -2.5V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

10

100

1000

0.1 1 10

V

GS

= -4.5V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

0.1

1

10

0.1110

V

DS

= -10V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

10

100

1000

0.1 1 10

V

GS

= -1.8V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Fig.1 Typical output characteristics(

Ⅰ

) Fig.2 Typical output characteristics(

Ⅱ

)

Fig.3 Typical Transfer Characteristics

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current(

Ⅰ

)

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current(

Ⅱ

)

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current(

Ⅲ

)

Fig.7 Static Drain-Source On-State

Resistance vs. Drain Current(

Ⅳ

)

Fig.9 Forward Transfer Admittance

vs. Drain Current

DRAIN CURRENT : -I

D

[A]

DRAIN-SOURCE VOLTAGE : -V

DS

[V] DRAIN-SOURCE VOLTAGE : -V

DS

[V]

DRAIN CURRENT : -I

D

[A]

DRAIN CURRENT : -I

D

[A]

GATE-SOURCE VOLTAGE : -V

GS

[V]

DRAIN-CURRENT : -I

D

[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(ON)[m

Ω

]

DRAIN-CURRENT : -I

D

[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(ON)[m

Ω

]

DRAIN-CURRENT : -I

D

[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(ON)[m

Ω

]

DRAIN-CURRENT : -I

D

[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(ON)[m

Ω

]

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : -I

D

[A]

10

100

1000

0.1 1 10

V

GS

= -1.5V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Fig.8 Static Drain-Source On-State

Resistance vs. Drain Current(

Ⅴ

)

DRAIN-CURRENT : -I

D

[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(ON)[m

Ω

]

TT8U1TR

TT8U1TR

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