TT8U1TR

TT8U1
Data Sheet
4/5
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
0
50
100
150
200
250
0246810
Ta=25°C
Pulsed
I
D
= -2.4A
I
D
= -1.2A
0.01
0.1
1
10
00.511.5
V
GS
=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
1
2
3
4
5
02468
Ta=25°C
V
DD
= -10V
I
D
= -2.4A
R
G
=10
Pulsed
10
100
1000
10000
0.01 0.1 1 10 100
Coss
Crss
Ta=25°C
f=1MHz
V
GS
=0VCiss
1
10
100
1000
10000
0.01 0.1 1 10
t
r
t
f
t
d
(on)
t
d
(off)
Ta=25°C
V
DD
= -10V
V
GS
= -4.5V
R
G
=10
Ω
Pulsed
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.13 Dynamic Input Characteristics
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Fig.12 Switching Characteristics
REVERSE DRAIN CURRENT : -Is [A]
SOURCE-DRAIN VOLTAGE : -V
SD
[V]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m
]
GATE-SOURCE VOLTAGE : -V
GS
[V]
SWITCHING TIME : t [ns]
DRAIN-CURRENT : -I
D
[A]
GATE-SOURCE VOLTAGE : -V
GS
[V]
TOTAL GATE CHARGE : Qg [nC]
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
CAPACITANCE : C [pF]
0.0001
0.001
0.01
0.1
1
10
100
010203040
REVERSE VOLTAGE : V
R
[V]
REVERSE CURRENT : I
R
[mA]
pulsed
Ta= - 25
Ta = 25
Ta = 75
Ta = 125
Fig.15 Reverse Current vs. Reverse Voltage
0.1
1
10
100
1000
10000
0 0.1 0.2 0.3 0.4 0.5 0.6
FORWARD VOLTAGE : V
F
[V]
FORWARD CURRENT : I
F
[mA]
pulsed
Ta= 25
Ta = 75
Ta = 125
Ta= - 25
Fig.16 Forward Current vs. Forward Voltage
TT8U1
Data Sheet
5/5
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
zMeasurement circuits
F
ig.1-1 Switching Time Measurement Circu
it
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
Fig.1-2 Switching Waveforms
90%
90% 90%
10% 10
%
50%
10%
50%
V
GS
Pulse width
V
DS
t
on
t
off
t
r
t
d(on)
t
f
t
d(off)
F
ig.2-1 Gate Charge Measurement Circu
it
V
GS
I
G(Const.)
R
G
V
D
S
D.U.T.
I
D
R
L
V
DD
Fig.2-2 Gate Charge Waveform
VG
V
GS
Charge
Q
g
Qgs Qgd
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore ; it would raise a junction temperature, and
increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding
temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
protection circuit.
R0039
A
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© 2009 ROHM Co., Ltd. All rights reserved.
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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Great care was taken in ensuring the accuracy of the information specied in this document.
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TT8U1TR

Mfr. #:
Manufacturer:
Description:
MOSFET TRANS MOSFET PCH 20V 2.4A 8PIN
Lifecycle:
New from this manufacturer.
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