2004-01-27
Page 1
BTS 452 T
Smart Power High-Side-Switch
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown with restart
Overvoltage protection
(including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
with external resistor
CMOS compatible input
Loss of GND and loss of V
bb
protection
ESD - Protection
Very low standby current
Product Summary
Overvoltage protection V
bb
(
AZ
)
62 V
Operating voltage V
bb
(
on
)
6...52 V
On-state resistance R
ON
200 m
Nominal load current I
L
(
ISO
)
1.8 A
P-TO252-5-11
Application
All types of resistive, inductive and capacitive loads
µC compatible power switch for 12 V, 24 V and 42 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS
technology.
Providing embedded protective functions.
2004-01-27
Page 2
BTS 452 T
Block Diagram
+ V
bb
IN
Signal GND
ESD
miniPROFET
OUT
GND
Logic
Voltage
source
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
Load GND
Load
V
Logic
Overvoltage
protection
Pin Symbol Function
1
GND Logic ground
2
IN Input, activates the power switch in case of logic high signal
3
Vbb Positive power supply voltage
4
NC not connected
5
OUT Output to the load
TAB Vbb Positive power supply voltage
Pin configuration
Tab = V
BB
1 2 (3) 4 5
GND IN NC OUT
Top view
2004-01-27
Page 3
BTS 452 T
Maximum Ratings at Tj = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Supply voltage V
bb
52 V
Supply voltage for full short circuit protection V
bb
(
SC
)
50
Continuous input voltage V
IN
-10 ... +16
Load current (Short - circuit current, see page 5) I
L
self limited A
Current through input pin (DC) I
IN
± 5
mA
Operating temperature T
j
-40 ...+150
°C
Storage temperature T
stg
-55 ... +150
Power dissipation
1)
P
tot
41.6 W
Inductive load switch-off energy dissipation
1)2)
single pulse, (see page 8)
Tj =150 °C, I
L
= 1 A
E
AS
150 mJ
Load dump protection
2)
V
LoadDump
3)
= V
A
+ V
S
R
I
=2, t
d
=400ms, V
IN
= low or high, V
A
=13,5V
R
L
= 13.5
R
L
= 27
V
Loaddump
73.5
88.5
V
Electrostatic discharge voltage (Human Body Model)
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin
all other pins
V
ESD
± 1
± 5
kV
Thermal Characteristics
junction - case:
R
thJC
- - 3 K/W
Thermal resistance @ min. footprint R
th
(
JA
)
- 80 - K/W
Thermal resistance @ 6 cm
2
cooling area
1)
R
th
(
JA
)
- 45 60
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 16)
2
not subject to production test, specified by design
3
V
Loaddump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND pin, e.g. with a
150 resistor in GND connection. A resistor for the protection of the input is integrated.

BTS452TT

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IC PWR SWITCH 60V HISIDE DPAK-5
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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