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BTS452TT

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
2004-01-27
Page 7
BTS 452 T
Terms
Inductive and overvoltage output clamp
+ V
bb
OUT
GND
V
Z
V
ON
PROFET
V
IN
OUT
GND
bb
V
IN
I
IN
V
bb
I
bb
I
L
V
OUT
I
GND
V
ON
R
GND
V
ON
clamped to 59V min.
Overvoltage protection of logic part
Input circuit (ESD protection)
+
V
bb
IN
GND
GND
R
Signal GND
Logic
V
Z2
I
R
V
Z1
IN
GND
I
R
ZD
I
I
I
ESD-
The use of ESD zener diodes as voltage clamp
at DC conditions is not recommended
V
Z1
=6.1V typ., V
Z2
=V
bb(AZ)
=62V min.,
R
I
=3.5 kΩ typ., R
GND
=150Ω
Reverse battery protection
Internal output pull down
GND
Logic
IN
OUT
L
R
Power GND
GND
R
Signal GND
Power
Inverse
I
R
V
bb
-
Diode
V
OUT
Signal GND
R
O
V
bb
R
GND
=150Ω, R
I
=3.5kΩ typ.,
Temperature protection is not active during
inverse current
R
O
= 200 kΩ typ.
2004-01-27
Page 8
BTS 452 T
V
bb
disconnect with charged inductive
load
PROFET
V
IN
OUT
GND
bb
V
bb
high
GND disconnect
PROFET
V
IN
OUT
GND
bb
V
bb
V
IN
V
GND
Inductive Load switch-off energy
dissipation
PROFET
V
IN
OUT
GND
bb
=
E
E
E
E
AS
bb
L
R
E
Load
R
L
L
{
L
Z
GND disconnect with GND pull up
PROFET
V
IN
OUT
GND
bb
V
bb
V
GND
V
IN
Energy stored in load inductance: E
L
= ½ * L * I
L
2
While demagnetizing load inductance,
the enérgy dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
= V
ON(CL)
* i
L
(t) dt,
with an approximate solution for R
L
> 0Ω:
E
IL
R
VV
IR
V
AS
L
L
bb OUT CL
LL
OUT CL
=+ +
*
*
*( | )*ln(
*
||
)
()|
()
2
1
2004-01-27
Page 9
BTS 452 T
Typ. transient thermal impedance
Z
thJA
=f(t
p
) @ 6cm
2
heatsink area
Parameter: D=t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
p
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJA
D=0
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
Typ. transient thermal impedance
Z
thJA
=f(t
p
) @ min. footprint
Parameter: D=t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
p
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJA
D=0
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
Typ. on-state resistance
R
ON
= f(V
bb
); I
L
= 1 A ; V
in
= high
0 5 10 15 20 25 30 35 40
V
50
V
bb
0
50
100
150
200
250
300
mΩ
400
R
ON
-40°C
25°C
150°C
Typ. on-state resistance
R
ON
= f(T
j
) ; V
bb
= 13,5V ; V
in
= high
-40 -20 0 20 40 60 80 100 120
°C
160
T
j
0
50
100
150
200
mΩ
300
R
ON
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

BTS452TT

Mfr. #:
Buy BTS452TT
Manufacturer:
Infineon Technologies
Description:
IC PWR SWITCH 60V HISIDE DPAK-5
Lifecycle:
New from this manufacturer.
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