ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 10 mA 1.2 1.4 V
Reverse Current IR VR = 5 V 5
μ
A
Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 10 pF
Transistor Collector to Emitter Dark
Current
ICEO VCE = 48 V, IF = 0 mA 100 nA
IF = 5 mA, VCE = 5 V 50 160 400 % Coupled Current Transfer Ratio
(I
C/IF)
*1
CTR
I
F = 1 mA, VCE = 5 V 10 80
Collector Saturation
Voltage
VCE (sat) IF = 10 mA, IC = 2 mA 0.3 V
Isolation Resistance RI-O VI-O = 1.0 kVDC 10
11
Ω
Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.5 pF
Rise Time
*2
tr VCC = 10 V, IC = 2 mA, RL = 100 Ω 3
μ
s
Fall Time
*2
tf 5
*1 CTR rank
CTR Rank CTR (%) Conditions
80 to 160 IF = 5 mA, VCE = 5 V
H
16 and larger I
F = 1 mA, VCE = 5 V
100 to 200 IF = 5 mA, VCE = 5 V
Q
20 and larger I
F = 1 mA, VCE = 5 V
130 to 260 IF = 5 mA, VCE = 5 V
W
26 and larger I
F = 1 mA, VCE = 5 V
200 to 400 IF = 5 mA, VCE = 5 V
L
40 and larger I
F = 1 mA, VCE = 5 V
50 to 400 IF = 5 mA, VCE = 5 V
N
10 and larger I
F = 1 mA, VCE = 5 V
*2 Test circuit for switching time
Input
Output
90%
10%
tr
td
tf
ts
ton
toff
V
CC
V
OUT
I
F
R
L
= 100 Ω
50 Ω
In monitor
PW = 100 s
Duty cycle = 1/10
μ
Pulse Input
<R>
Data Sheet PN10777EJ02V0DS
6
PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1
