TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Diode Power Dissipation P
D
(mW)
Transistor Power Dissipation P
C
(mW)
Ambient Temperature T
A
(°C)
Forward Current I
F
(mA)
Forward Voltage V
F
(V)
Collector to Emitter Dark Current I
CEO
(nA)
Ambient Temperature T
A
(°C)
Ambient Temperature T
A
(°C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
150
100
50
0 25 50 75 100
110
125 150
1.5 mW/°C
150
100
50
25 50 75 100
110
125 1500
10 000
100 110
1 000
100
10
1
7550250–25–50
V
CE
= 48 V
1.5 mW/°C
24 V
10 V
5 V
100
1.51.41.31.21.11.00.90.80.7
50
10
5
1
0.5
0.1
0°C
–25°C
–55°C
+60°C
+25°C
T
A
= +100°C
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
10
20
02
46
8
I
F
= 1 mA
15
5
10
I
F
= 2 mA
I
F
= 5 mA
I
F
= 10 mA
Collector Saturation Voltage V
CE (sat)
(V)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
Collector Current I
C
(mA)
0.1
1
10
0 0.2 0.4 0.6 0.8 1.0
I
F
= 1 mA
I
F
= 2 mA
I
F
= 5 mA
I
F
= 10 mA
Remark The graphs indicate nominal characteristics.
<R>
Data Sheet PN10777EJ02V0DS
7
PS2561D-1,PS2561DL-1,PS2561DL1-1,PS2561DL2-1
