December 2007 Rev 6 1/13
13
STL60NH3LL
N-channel 30 V - 0.0065 - 30 A - PowerFLAT™ (6x5)
ultra low gate charge STripFET™ Power MOSFET
Features
Improved die-to-footprint ratio
Very low profile package (1mm max)
Very low thermal resistance
Very low gate charge
Low threshold device
Application
Switching applications
Description
This application specific Power MOSFET is the
latest generation of STMicroelectronics unique
“STripFET™” technology. The resulting transistor
is optimized for low on-resistance and minimal
gate charge. The Chip-scaled PowerFLAT™
package allows a significant board space saving,
still boosting the performance.
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
(max)
I
D
STL60NH3LL 30V <0.0085 16A
PowerFLAT™(6x5)
Table 1. Device summary
Order code Marking Package Packaging
STL60NH3LL L60NH3LL PowerFLAT™ (6 x 5) Tape & reel
www.st.com
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Contents STL60NH3LL
2/13
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STL60NH3LL Electrical ratings
3/13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 30 V
V
GS
Gate-source voltage ± 16 V
I
D
(1)
1. The value is rated according R
thj-C
and is limited by wire bonding.
Drain current (continuous) at T
C
= 25°C 30 A
I
D
(1)
Drain current (continuous) at T
C
= 100°C 30 A
I
D
(2)
2. This value is according R
thj-pcb
Drain current (continuous) at T
C
= 25°C 16 A
I
DM
(3)
3. Pulse width limited by safe operating area
Drain current (pulsed) 64 A
P
TOT
(1)
Total dissipation at T
C
= 25°C 60 W
P
TOT
(2)
Total dissipation at T
C
= 25°C 4 W
Derating factor 0.03 W/°C
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case (drain) Max 2.08 °C/W
Rthj-pcb
(1)
1. When mounted on FR-4 board of 1inch
2
, 2 oz. Cu., t<10sec
Thermal resistance junction-pcb Max 31.3 °C/W
Table 4. Avalanche data
Symbol Parameter Value Unit
I
AV
Not-repetitive avalanche current 7.5 A
E
AS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iav)
150 mJ
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STL60NH3LL

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N Ch 30V 0.0065 Ohm 30A Pwr
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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