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STL60NH3LL

P1-P3P4-P6P7-P9P10-P12P13-P13
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STL60NH3LL Electrical characteristics
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Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs. temperature
Figure 11. Normalized on resistance vs.
temperature
Figure 12. Source-drain diode forward
characteristics
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Electrical characteristics STL60NH3LL
8/13
The previous curve gives the single pulse safe operating area for unclamped inductive loads
under the following conditions:
P
D(AVE)
=0.5*(1.3*BV
DSS
*I
AV
)
E
AS(AR)
=P
D(AVE)
*t
AV
Where:
I
AV
is the allowable current in avalanche
P
D(AVE)
is the average power dissipation in avalanche (single pulse)
t
AV
is the time in avalanche
Figure 13. Allowable Iav vs Time in Avalanche Figure 14. Allowable Iav vs Time in Avalanche
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STL60NH3LL Test circuit
9/13
3 Test circuit
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test
circuit
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
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P1-P3P4-P6P7-P9P10-P12P13-P13

STL60NH3LL

Mfr. #:
Buy STL60NH3LL
Manufacturer:
STMicroelectronics
Description:
MOSFET N Ch 30V 0.0065 Ohm 30A Pwr
Lifecycle:
New from this manufacturer.
Delivery:
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