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NJVMJD112G

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2013
November, 2013 − Rev. 13
1 Publication Order Number:
MJD112/D
MJD112 (NPN),
MJD117 (PNP)
Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Electrically Similar to Popular TIP31 and TIP32 Series
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SILICON
POWER TRANSISTORS
2 AMPERES
100 VOLTS, 20 WATTS
DPAK−3
CASE 369D
DPAK
CASE 369C
MARKING DIAGRAMS
A = Assembly Location
Y = Year
WW = Work Week
x = 2 or 7
G = Pb−Free Package
AYWW
J11xG
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
YWW
J11xG
http://onsemi.com
DPAK DPAK−3
MJD112 (NPN), MJD117 (PNP)
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage V
CEO
100 Vdc
Collector−Base Voltage V
CB
100 Vdc
Emitter−Base Voltage V
EB
5 Vdc
Collector Current
Continuous
Peak
I
C
2
4
Adc
Base Current I
B
50 mAdc
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
20
0.16
W
W/°C
Total Power Dissipation (Note1)
@ T
A
= 25°C
Derate above 25°C
P
D
1.75
0.014
W
W/°C
Operating and Storage Junction Temperature Range T
J
, T
stg
−65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
6.25 °C/W
Thermal Resistance, Junction−to−Ambient (Note 1)
R
q
JA
71.4 °C/W
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
MJD112 (NPN), MJD117 (PNP)
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(I
C
= 30 mAdc, I
B
= 0)
V
CEO(sus)
100 −
Vdc
Collector Cutoff Current
(V
CE
= 50 Vdc, I
B
= 0)
I
CEO
− 20
mAdc
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
I
CBO
− 20
mAdc
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
I
EBO
− 2
mAdc
Collector−Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0)
I
CBO
− 10
mAdc
Emitter−Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
I
EBO
− 2
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.5 Adc, V
CE
= 3 Vdc)
(I
C
= 2 Adc, V
CE
= 3 Vdc)
(I
C
= 4 Adc, V
CE
= 3 Vdc)
h
FE
500
1000
200
−
12,000
−
−
Collector−Emitter Saturation Voltage
(I
C
= 2 Adc, I
B
= 8 mAdc)
(I
C
= 4 Adc, I
B
= 40 mAdc)
V
CE(sat)
−
−
2
3
Vdc
Base−Emitter Saturation Voltage
(I
C
= 4 Adc, I
B
= 40 mAdc)
V
BE(sat)
− 4
Vdc
Base−Emitter On Voltage
(I
C
= 2 Adc, V
CE
= 3 Vdc)
V
BE(on)
− 2.8
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 0.75 Adc, V
CE
= 10 Vdc, f = 1 MHz)
f
T
25 −
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 Mhz)
MJD117, NJVMJD117T4G
MJD112, NJVMJD112G, NJVMJD112T4G
C
ob
−
−
200
100
pF
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
P1-P3P4-P6P7-P9P10-P10

NJVMJD112G

Mfr. #:
Buy NJVMJD112G
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors BIP DPAK NPN 2A 100V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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