NJVMJD112G Datasheet MJD112T4G, MJD112RLG, NJVMJD117T4G | P4-P6

MJD112 (NPN), MJD117 (PNP)

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4

0.04 0.2 40.1

0.06

0.6 1

4

I

C

, COLLECTOR CURRENT (AMP)

V

CC

= 30 V

I

C

/I

B

= 250

t, TIME (s)μ

2

1

0.8

0.6

0.4

0.2

t

s

t

f

Figure 1. Switching Times Test Circuit Figure 2. Switching Times

V

2

APPROX

+8 V

0

≈ 8 k

SCOPE

V

CC

-30 V

R

C

51

FOR t

d

AND t

r

, D

1

IS DISCONNECTED

AND V

2

= 0

FOR

NPN

TEST

CIRCUIT

REVERSE

ALL

POLARITIES.

25 ms

t

r

, t

f

≤ 10 ns

DUTY CYCLE = 1%

+ 4 V

t

r

t

d

@ V

BE(off)

= 0 V

PNP

NPN

R

B

& R

C

VARIED TO OBTAIN DESIRED CURRENT LEVELS

D

1

, MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE I

B

≈ 100 mA

MSD6100 USED BELOW I

B

≈ 100 mA

V

1

APPROX

-12 V

TUT

R

B

D

1

≈ 60

0.4 2

I

B1

= I

B2

T

J

= 25°C

Figure 3. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1

0.01

1000

0.3

0.2

0.07

r(t), EFFECTIVE TRANSIENT

R

q

JC(t)

= r(t) R

q

JC

R

q

JC

= 6.25°C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

1

T

J(pk)

- T

C

= P

(pk)

q

JC(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t

1

/t

2

0.01

THERMAL RESISTANCE (NORMALIZED)

0.7

0.5

0.1

0.05

0.03

0.02

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

0.2

SINGLE PULSE

D = 0.5

0.05

0.1

0.01

MJD112 (NPN), MJD117 (PNP)

http://onsemi.com

5

I

C

, COLLECTOR CURRENT (AMP)

Figure 4. Maximum Rated Forward Biased

Safe Operating Area

Figure 5. Power Derating

2

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.3

100

5

2

0.5

0.2

BONDING WIRE LIMITED

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

5203

T

J

= 150°C

CURVES APPLY BELOW RATED V

CEO

100ms

1ms

dc

0.1

1

3

7

10

10730

25

T, TEMPERATURE (°C)

0

50 75 100 125 1

5

20

15

10

5

P

D

, POWER DISSIPATION (WATTS)

2.5

0

2

1.5

1

0.5

T

A

T

C

T

A

SURFACE

MOUNT

T

C

0.7

5ms

50 70 200

500ms

ACTIVE−REGION SAFE−OPERATING AREA

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I

C

− V

CE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 5 and 6 is based on T

J(pk)

= 150_C; T

C

is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided

T

J(pk)

< 150_C. T

J(pk)

may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

C, CAPACITANCE (pF)

V

R

, REVERSE VOLTAGE (VOLTS)

C

ib

0.04

30

1 4 10 40

T

C

= 25°C

200

10

50

70

100

0.1 2 6 20

20

PNP

NPN

0.60.40.20.06

Figure 6. Capacitance

C

ob

MJD112 (NPN), MJD117 (PNP)

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6

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

I

C

, COLLECTOR CURRENT (AMP)

NPN MJD112 PNP MJD117

Figure 7. DC Current Gain

Figure 8. Collector Saturation Region

Figure 9. “On Voltages

0.04

I

C

, COLLECTOR CURRENT (AMP)

300

0.06 0.2

2 k

800

4 k

h

FE

, DC CURRENT GAIN

V

CE

= 3 V

T

J

= 125°C

3 k

0.1 0.6

25°C

-55°C

1 k

0.4 1

6 k

400

600

2 4 0.04

300

0.06 0.2

2 k

800

4 k

h

FE

, DC CURRENT GAIN

3 k

0.1 0.6

25°C

-55°C

1 k

0.4 1

6 k

400

600

24

3.4

I

B

, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.6

0.1 0.2 0.5 1025

I

C

=

0.5 A

1 A

1

3

1

0.04

I

C

, COLLECTOR CURRENT (AMP)

1.4

1

V, VOLTAGE (VOLTS)

2.2

1.8

0.6

0.2

T

J

= 25°C

V

BE(sat)

@ I

C

/I

B

= 250

V

BE

@ V

CE

= 3 V

V

CE(sat)

@ I

C

/I

B

= 250

0.06 0.2 20.1 0.60.4 1 4 0.04

I

C

, COLLECTOR CURRENT (AMP)

1.4

1

V, VOLTAGE (VOLTS)

2.2

1.8

0.6

0.2

T

J

= 25°C

V

BE(sat)

@ I

C

/I

B

= 250

V

CE(sat)

@ I

C

/I

B

= 250

0.06 0.2 20.1 0.60.4 1 4

20 50 100

3.4

I

B

, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.6

0.1 0.2 0.5 10251

3

1

20 50 100

V

BE

@ V

CE

= 3 V

T

C

= 125°C

V

CE

= 3 V

4 A

T

J

= 125°C

2 A

T

J

= 125°C

I

C

=

0.5 A

1 A 4 A2 A

TYPICAL ELECTRICAL CHARACTERISTICS

NJVMJD112G

NJVMJD112G

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