PESD3V3V1BL
Low capacitance bidirectional ESD protection diode
31 May 2017 Product data sheet
1. General description
Low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, designed to protect
one signal line from the damage caused by ESD and other transients. The device is housed in a
leadless ultra small SOD882 (DFN1006-2) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
Bidirectional ESD protection of one line
Ultra small SMD plastic package
Low clamping voltage: V
CL
= 9.8 V @ 16 A TLP
Ultra low leakage current: I
RM
< 1 nA
ESD protection up to 30 kV
Reverse standoff voltage V
RWM
= 3.3 V
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PPM
= 5 A
IEC 61000-4-5 (surge); I
PPM
= 6.14 A (average measured)
AEC-Q101 qualified
3. Applications
ESD and surge protection for:
very sensitive interface lines
generic interface lines
in portable electronics, communication, consumer and computing devices.
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
RWM
reverse standoff
voltage
T
amb
= 25 °C - - 3.3 V
C
d
diode capacitance f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C - 11 13 pF
Nexperia
PESD3V3V1BL
Low capacitance bidirectional ESD protection diode
PESD3V3V1BL All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 31 May 2017 2 / 13
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K1 cathode (diode 1)
2 K2 cathode (diode 2)
21
Transparent
top view
DFN1006-2 (SOD882)
sym045
21
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PESD3V3V1BL DFN1006-2 plastic, leadless ultra small package; 2 terminals; 0.65 mm pitch;
1 mm x 0.6 mm x 0.48 mm body
SOD882
7. Marking
Table 4. Marking codes
Type number Marking code
PESD3V3V1BL X1
Nexperia
PESD3V3V1BL
Low capacitance bidirectional ESD protection diode
PESD3V3V1BL All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 31 May 2017 3 / 13
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
I
PPM
rated peak pulse current t
p
= 8/20 µs [1] - 5 A
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
ESD maximum ratings
V
ESD
electrostatic discharge
voltage
IEC 61000-4-2; contact discharge [2] - 30 kV
[1] According to IEC 61000-4-5.
[2] Device stressed with ten non-repetitive ESD pulses.
t
p
(µs)
0 403010 20
001aaa630
40
80
120
I
PP
(%)
0
e
-t
100 % I
PP
; 8 µs
50 % I
PP
; 20 µs
Fig. 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
001aaa631
I
PP
100 %
90 %
t
30 ns
60 ns
10 %
t
r
= 0.6 ns to 1 ns
Fig. 2. ESD pulse waveform according to
IEC 61000-4-2

PESD3V3V1BLYL

Mfr. #:
Manufacturer:
Nexperia
Description:
TVS Diodes / ESD Suppressors Low capacitance bidirectional ESD protection diode
Lifecycle:
New from this manufacturer.
Delivery:
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