Nexperia
PESD3V3V1BL
Low capacitance bidirectional ESD protection diode
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Nexperia B.V. 2017. All rights reserved
Product data sheet 31 May 2017 4 / 13
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
RWM
reverse standoff
voltage
T
amb
= 25 °C - - 3.3 V
V
BR
breakdown voltage I
R
= 5 mA; T
amb
= 25 °C 4.5 - - V
I
RM
reverse leakage
current
V
RWM
= 3.3 V; T
amb
= 25 °C - 1 10 nA
C
d
diode capacitance f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C - 11 13 pF
V
CL
clamping voltage I
PP
= 5 A; t
p
= 8/20 μs; T
amb
= 25 °C [1] - 8.5 10 V
R
dyn
dynamic resistance I
R
= 10 A; T
amb
= 25 °C [2] - 0.2 - Ω
[1] Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008.
V
R
(V)
0 542 31
006aab607
8
10
12
C
d
(pF)
6
f = 1 MHz; T
amb
= 25 °C
Fig. 3. Diode capacitance as a function of reverse
voltage; typical values
006aab608
1
10
- 1
10
2
10
10
3
10
- 2
T
j
(°C)
- 100 1501000 50- 50
I
RM
I
RM(25°C)
Fig. 4. Relative variation of reverse leakage current
as a function of junction temperature; typical
values
