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MT16HTF25664AZ-800M1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
DDR2 SDRAM UDIMM
MT16HTF12864AZ – 1GB
MT16HTF25664AZ – 2GB
MT16HTF51264AZ – 4GB
Features
• 240-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC2-8500, PC2-6400,
PC2-5300, PC2-4200, or PC2-3200
• 1GB (128 Meg x 64), 2GB (256 Meg x 64), 4GB (512
Meg x 64)
• V
DD
= V
DDQ
= 1.8V
• V
DDSPD
= 1.7–3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
t
CK
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
• Halogen-free
Figure 1: 240-Pin UDIMM (MO-237 R/C E)
Module height: 30mm (1.18in)
Options Marking
• Operating temperature
– Commercial (0°C ≤ T
A
≤ +70°C) None
– Industrial (–40°C ≤ T
A
≤ +85°C)
1
I
• Package
– 240-pin DIMM (halogen-free) Z
• Frequency/CL
2
– 1.875ns @ CL = 7 (DDR2-1066)
3
-1GA
– 2.5ns @ CL = 5 (DDR2-800) -80E
– 2.5ns @ CL = 6 (DDR2-800) -800
– 3ns @ CL = 5 (DDR2-667) -667
Notes:
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
3. Not recommended for new designs.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s) t
RCD
(ns)
t
RP
(ns)
t
RC
(ns)CL = 7 CL = 6 CL = 5 CL = 4 CL = 3
-1GA PC2-8500 1066 800 667 533 400 13.125 13.125 58.125
-80E PC2-6400 800 800 533 400 12.5 12.5 57.5
-800 PC2-6400 800 667 533 400 15 15 60
-667 PC2-5300 – 667 553 400 15 15 60
-53E PC2-4200 – – 553 400 15 15 55
-40E PC2-3200 – – 400 400 15 15 55
1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM
Features
PDF: 09005aef83b82bc1
htf16c128_256_512x64az – Rev. E 4/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Table 2: Addressing
Parameter 1GB 2GB 4GB
Refresh count 8K 8K 8K
Row address 16K A[13:0] 16K A[13:0] 32K A[14:0]
Device bank address 4 BA[1:0] 8 BA[2:0] 8 BA[2:0]
Device configuration 512Mb (64 Meg x 8) 1Gb (128 Meg x 8) 2Gb (256 Meg x 8)
Column address 1K A[9:0] 1K A[9:0] 1K A[9:0]
Module rank address 2 S#[1:0] 2 S#[1:0] 2 S#[1:0]
Table 3: Part Numbers and Timing Parameters – 1GB Modules
Base device: MT47H64M8,
1
512Mb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT16HTF12864A(I)Z-80E__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT16HTF12864A(I)Z-800__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT16HTF12864A(I)Z-667__ 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Table 4: Part Numbers and Timing Parameters – 2GB Modules
Base device: MT47H128M8,
1
1Gb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT16HTF25664A(I)Z-1GA__ 2GB 256 Meg x 64 8.5 GB/s 1.875ns/1066 MT/s 7-7-7
MT16HTF25664A(I)Z-80E__ 2GB 256 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT16HTF25664A(I)Z-800__ 2GB 256 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT16HTF25664A(I)Z-667__ 2GB 256 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Table 5: Part Numbers and Timing Parameters – 4GB Modules
Base device: MT47H256M8,
1
2Gb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT16HTF51264A(I)Z-1GA__ 4GB 512 Meg x 64 8.5 GB/s 1.875ns/1066 MT/s 7-7-7
MT16HTF51264A(I)Z-80E__ 4GB 512 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT16HTF51264A(I)Z-800__ 4GB 512 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT16HTF51264A(I)Z-667__ 4GB 512 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Notes:
1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT16HTF25664AZ-800M1.
1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM
Features
PDF: 09005aef83b82bc1
htf16c128_256_512x64az – Rev. E 4/14 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Pin Assignments
Table 6: Pin Assignments
240-Pin UDIMM Front 240-Pin UDIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1 V
REF
31 DQ19 61 A4 91 V
SS
121 V
SS
151 V
SS
181 V
DDQ
211 DM5
2 V
SS
32 V
SS
62 V
DDQ
92 DQS5# 122 DQ4 152 DQ28 182 A3 212 NC
3 DQ0 33 DQ24 63 A2 93 DQS5 123 DQ5 153 DQ29 183 A1 213 V
SS
4 DQ1 34 DQ25 64 V
DD
94 V
SS
124 V
SS
154 V
SS
184 V
DD
214 DQ46
5 V
SS
35 V
SS
65 V
SS
95 DQ42 125 DM0 155 DM3 185 CK0 215 DQ47
6 DQS0# 36 DQS3# 66 V
SS
96 DQ43 126 NC 156 NC 186 CK0# 216 V
SS
7 DQS0 37 DQS3 67 V
DD
97 V
SS
127 V
SS
157 V
SS
187 V
DD
217 DQ52
8 V
SS
38 V
SS
68 NC 98 DQ48 128 DQ6 158 DQ30 188 A0 218 DQ53
9 DQ2 39 DQ26 69 V
DD
99 DQ49 129 DQ7 159 DQ31 189 V
DD
219 V
SS
10 DQ3 40 DQ27 70 A10 100 V
SS
130 V
SS
160 V
SS
190 BA1 220 CK2
11 V
SS
41 V
SS
71 BA0 101 SA2 131 DQ12 161 NC 191 V
DDQ
221 CK2#
12 DQ8 42 NC 72 V
DDQ
102 NC 132 DQ13 162 NC 192 RAS# 222 V
SS
13 DQ9 43 NC 73 WE# 103 V
SS
133 V
SS
163 V
SS
193 S0# 223 DM6
14 V
SS
44 V
SS
74 CAS# 104 DQS6# 134 DM1 164 NC 194 V
DDQ
224 NC
15 DQS1# 45 NC 75 V
DDQ
105 DQS6 135 NC 165 NC 195 ODT0 225 V
SS
16 DQS1 46 NC 76 S1# 106 V
SS
136 V
SS
166 V
SS
196 A13 226 DQ54
17 V
SS
47 V
SS
77 ODT1 107 DQ50 137 CK1 167 NC 197 V
DD
227 DQ55
18 NC 48 NC 78 V
DDQ
108 DQ51 138 CK1# 168 NC 198 V
SS
228 V
SS
19 NC 49 NC 79 V
SS
109 V
SS
139 V
SS
169 V
SS
199 DQ36 229 DQ60
20 V
SS
50 V
SS
80 DQ32 110 DQ56 140 DQ14 170 V
DDQ
200 DQ37 230 DQ61
21 DQ10 51 V
DDQ
81 DQ33 111 DQ57 141 DQ15 171 CKE1 201 V
SS
231 V
SS
22 DQ11 52 CKE0 82 V
SS
112 V
SS
142 V
SS
172 V
DD
202 DM4 232 DM7
23 V
SS
53 V
DD
83 DQS4# 113 DQS7# 143 DQ20 173 NC 203 NC 233 NC
24 DQ16 54 BA2 84 DQS4 114 DQS7 144 DQ21 174 NF/A14
1
204 V
SS
234 V
SS
25 DQ17 55 NC 85 V
SS
115 V
SS
145 V
SS
175 V
DDQ
205 DQ38 235 DQ62
26 V
SS
56 V
DDQ
86 DQ34 116 DQ58 146 DM2 176 A12 206 DQ39 236 DQ63
27 DQS2# 57 A11 87 DQ35 117 DQ59 147 NC 177 A9 207 V
SS
237 V
SS
28 DQS2 58 A7 88 V
SS
118 V
SS
148 V
SS
178 V
DD
208 DQ44 238 V
DDSPD
29 V
SS
59 V
DD
89 DQ40 119 SDA 149 DQ22 179 A8 209 DQ45 239 SA0
30 DQ18 60 A5 90 DQ41 120 SCL 150 DQ23 180 A6 210 V
SS
240 SA1
Note:
1. Pin 174 is NF for 1GB, 2GB or A14 for 4GB.
1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM
Pin Assignments
PDF: 09005aef83b82bc1
htf16c128_256_512x64az – Rev. E 4/14 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

MT16HTF25664AZ-800M1

Mfr. #:
Buy MT16HTF25664AZ-800M1
Manufacturer:
Micron
Description:
DRAM Module DDR2 SDRAM 2Gbyte 240DIMM Tray
Lifecycle:
New from this manufacturer.
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