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BC857CDW1T1G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2013
August, 2016 − Rev. 10
1 Publication Order Number:
BC856BDW1T1/D
BC856BDW1T1G,
SBC856BDW1T1GSeries,
BC857BDW1T1G,
SBC857BDW1T1GSeries,
BC858CDW1T1G Series
Dual General Purpose
Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BC856, SBC856
BC857, SBC857
BC858
V
CEO
−65
−45
−30
V
Collector−Base Voltage
BC856, SBC856
BC857, SBC857
BC858
V
CBO
−80
−50
−30
V
Emitter−Base Voltage V
EBO
−5.0 V
Collector Current −Continuous I
C
−100 mAdc
Collector Current − Peak I
C
−200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
Per Device
FR−5 Board (Note 1)
T
A
= 25°C
Derate Above 25°C
P
D
380
250
3.0
mW
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
328
°C/W
Junction and Storage Temperature
Range
T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOT−363/SC−88
CASE 419B
STYLE 1
MARKING DIAGRAM
Q
1
(1)(2)
(3)
(4) (5) (6)
Q
2
www.onsemi.com
See detailed ordering and shipping information in the packag
e
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
3x = Specific Device Code
x = B, F, G, or L
(See Ordering Information)
M = Date Code
G = Pb−Free Package
3x MG
G
1
6
(Note: Microdot may be in either location)
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −10 mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
V
(BR)CEO
−65
−45
−30
−
−
−
−
−
−
V
Collector−Emitter Breakdown Voltage
(I
C
= −10 mA, V
EB
= 0)
BC856, SBC856 Series
BC857B, SBC857B Only
BC858 Series
V
(BR)CES
−80
−50
−30
−
−
−
−
−
−
V
Collector−Base Breakdown Voltage
(I
C
= −10 mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
V
(BR)CBO
−80
−50
−30
−
−
−
−
−
−
V
Emitter−Base Breakdown Voltage
(I
E
= −1.0 mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
V
(BR)EBO
−5.0
−5.0
−5.0
−
−
−
−
−
−
V
Collector Cutoff Current
(V
CB
= −30 V)
(V
CB
= −30 V, T
A
= 150°C)
I
CBO
−
−
−
−
−15
−4.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10 mA, V
CE
= −5.0 V)
BC856B, SBC856B, BC857B, SBC857B
BC857C, SBC857C, BC858C
(I
C
= −2.0 mA, V
CE
= −5.0 V)
BC856B, SBC856B, BC857B, SBC857B
BC857C, SBC857C, BC858C
h
FE
−
−
220
420
150
270
290
520
−
−
475
800
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
V
CE(sat)
−
−
−
−
−0.3
−0.65
V
Base−Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
V
BE(sat)
−
−
−0.7
−0.9
−
−
V
Base−Emitter On Voltage
(I
C
= −2.0 mA, V
CE
= −5.0 V)
(I
C
= −10 mA, V
CE
= −5.0 V)
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mA, V
CE
= −5.0 Vdc, f = 100 MHz)
f
T
100 − −
MHz
Output Capacitance
(V
CB
= −10 V, f = 1.0 MHz)
C
ob
− − 4.5
pF
Noise Figure
(I
C
= −0.2 mA, V
CE
= −5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
− − 10
dB
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
www.onsemi.com
3
TYPICAL CHARACTERISTICS − BC856/SBC856
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
I
C
, COLLECTOR CURRENT (mA)
-0.8
-1.0
-0.6
-0.2
-0.4
1.0
2.0
-0.1 -1.0
-10 -200
-0.2
0.2
0.5
-0.2 -1.0
-10 -200
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= -5.0 V
Figure 3. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
-1.0
-1.2
-1.6
-2.0
-0.02 -1.0
-10
0
-20
-0.1
-0.4
-0.8
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
-0.2 -2.0
-10 -200
-1.0
T
J
= 25°C
I
C
=
-10 mA
h
FE
, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
V
CE
= -5.0 V
T
A
= 25°C
0
-0.5 -2.0 -5.0
-20 -50 -100
-0.05 -0.2 -0.5 -2.0 -5.0
-100 mA
-20 mA
-1.4
-1.8
-2.2
-2.6
-3.0
-0.5 -5.0 -20
-50 -100
-55°C to 125°C
q
VB
for V
BE
-2.0
-5.0
-20
-50
-100
Figure 5. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
40
Figure 6. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
-0.1 -0.2 -1.0 -50
2.0
-2.0 -10
-100
100
200
500
50
20
20
10
6.0
4.0
-1.0 -10
-100
V
CE
= -5.0 V
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
T
-0.5 -5.0 -20
T
J
= 25°C
C
ob
C
ib
8.0
-50 mA
-200 mA
P1-P3P4-P6P7-P7

BC857CDW1T1G

Mfr. #:
Buy BC857CDW1T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 50V Dual PNP
Lifecycle:
New from this manufacturer.
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