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BC857CDW1T1G

P1-P3P4-P6P7-P7
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
www.onsemi.com
4
TYPICAL CHARACTERISTICS − BC857/SBC857/BC858
Figure 7. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
2.0
Figure 8. “Saturation” and “On” Voltages
I
C
, COLLECTOR CURRENT (mAdc)
-0.2
0.2
Figure 9. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 10. Base−Emitter Temperature
Coefficient
I
C
, COLLECTOR CURRENT (mA)
-0.6
-0.7
-0.8
-0.9
-1.0
-0.5
0
-0.2
-0.4
-0.1
-0.3
1.6
1.2
2.0
2.8
2.4
-1.2
-1.6
-2.0
-0.02 -1.0
-10
0
-20
-0.1
-0.4
-0.8
h
FE
, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
1.5
1.0
0.7
0.5
0.3
-0.2
-10 -100
-1.0
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= -10 V
V
CE
= -10 V
T
A
= 25°C
-55°C to +125°C
I
C
= -100 mA
I
C
= -20 mA
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1
-0.2 -0.5
-1.0
-2.0 -5.0
-10
-20 -50
-100
I
C
= -200 mAI
C
= -50 mAI
C
=
-10 mA
Figure 11. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
10
Figure 12. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mAdc)
-0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
-0.5
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
T
A
= 25°C
C
ob
C
ib
-0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40
150
-1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50
V
CE
= -10 V
T
A
= 25°C
T
A
= 25°C
1.0
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
www.onsemi.com
5
Figure 13. Thermal Response
Figure 14. Active Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
-200
-1.0
I
C
, COLLECTOR CURRENT (mA)
T
A
= 25°C
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
T
J
= 25°C
-100
-50
-10
-5.0
-2.0
-5.0 -10 -30 -45 -65 -100
1 s
BC558
BC557
BC556
The safe operating area curves indicate I
C
−V
CE
limits
of the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or T
A
is variable depending upon conditions. Pulse curves
are valid for duty cycles to 10% provided T
J(pk)
≤ 150°C.
T
J(pk)
may be calculated from the data in Figure 13. At high
case or ambient temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by the secondary breakdown.
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
1.00
RESISTANCE (NORMALIZED)
0.1
0.01
0.001
10 100 1.0k 10k 100k
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
Z
q
JA
(t) = r(t) R
q
JA
R
q
JA
= 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
R
q
JC
(t)
t
1
t
2
P
(pk)
DUTY CYCLE, D = t
1
/t
2
1.0M
0.02
0.01
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
www.onsemi.com
6
ORDERING INFORMATION
Device Device Marking Package Shipping
†
BC856BDW1T1G 3B SOT−363
(Pb−Free)
3,000 / Tape & Reel
SBC856BDW1T1G 3B SOT−363
(Pb−Free)
3,000 / Tape & Reel
BC856BDW1T3G 3B SOT−363
(Pb−Free)
10,000 / Tape & Reel
SBC856BDW1T3G 3B SOT−363
(Pb−Free)
10,000 / Tape & Reel
BC857BDW1T1G 3F SOT−363
(Pb−Free)
3,000 / Tape & Reel
SBC857BDW1T1G 3F SOT−363
(Pb−Free)
3,000 / Tape & Reel
BC857CDW1T1G 3G SOT−363
(Pb−Free)
3,000 / Tape & Reel
SBC857CDW1T1G 3G SOT−363
(Pb−Free)
3,000 / Tape & Reel
BC858CDW1T1G 3L SOT−363
(Pb−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
P1-P3P4-P6P7-P7

BC857CDW1T1G

Mfr. #:
Buy BC857CDW1T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 50V Dual PNP
Lifecycle:
New from this manufacturer.
Delivery:
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