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IRF7379PBF

P1-P3P4-P6P7-P9P10-P10
IRF7379PbF
4 www.irf.com
2 4 6 8 10
0.00
0.04
0.08
0.12
0.16
0.20
R , Drain-to-Source On Resistance
I , Drain Current (A)
D
DS (on)
VGS = 10V
VGS = 4.5V
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
N-Channel
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 4.0A
D
( Ω )
0 4 8 12 16
0.03
0.04
0.05
0.06
0.07
0.08
R , Drain-to-Source On Resistance
V , Gate-to-Source Voltage (V)
GS
DS (on)
ID = 5.8A
( Ω )
IRF7379PbF
www.irf.com 5
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Typical Capacitance Vs.
Drain-to-Source Voltage
N-Channel
0
200
400
600
800
1000
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 5 10 15 20 25
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
I = 2.4A
V = 24V
D
DS
FOR TEST CIRCUIT
SEE FIGURE 11
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7379PbF
6 www.irf.com
Fig 13. Typical Transfer Characteristics
Fig 12. Typical Output Characteristics
Fig 11. Typical Output Characteristics
Fig 14. Typical Source-Drain Diode
Forward Voltage
P-Channel
1
10
100
0.1 1 10 100
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
20µs PULSE WIDTH
T = 25°C
J
1
10
100
0.1 1 10 100
D
DS
20µs PULSE WIDTH
T = 150°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
J
1
10
100
45678910
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -15V
20µs PULSE WIDTH
DS
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2 1.5
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
P1-P3P4-P6P7-P9P10-P10

IRF7379PBF

Mfr. #:
Buy IRF7379PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V DUAL N / P CH 20V VGS MAX
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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