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BUK7K32-100EX

P1-P3P4-P6P7-P9P10-P12P13-P14
NXP Semiconductors
BUK7K32-100E
Dual N-channel 100 V, 27.5 mΩ standard level MOSFET
BUK7K32-100E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 2 September 2015 3 / 13
Symbol Parameter Conditions Min Max Unit
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
T
sld(M)
peak soldering temperature - 260 °C
Source-drain diode FET1 and FET2
I
S
source current T
mb
= 25 °C - 29 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 116 A
Avalanche Ruggedness FET1 and FET2
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
= 29 A; V
sup
≤ 100 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped;
Fig. 4
[1][2] - 67 mJ
[1] Refer to application note AN10273 for further information
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
Fig. 2. Continuous drain current as a function of
mounting base temperature
NXP Semiconductors
BUK7K32-100E
Dual N-channel 100 V, 27.5 mΩ standard level MOSFET
BUK7K32-100E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 2 September 2015 4 / 13
003aak240
1 10 10
2
10
3
10
-1
1
10
10
2
10
3
V
DS
(V)
I
D
I
D
(A)(A)
DCDC
100 ms100 ms
10 ms10 ms
1 ms1 ms
100 us100 us
t
p
= 10 ust
p
= 10 us
Limit R
DSon
= V
DS
/ I
D
Limit R
DSon
= V
DS
/ I
D
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5 - - 2.36 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
Minimum footprint; mounted on a
printed circuit board
- 95 - K/W
NXP Semiconductors
BUK7K32-100E
Dual N-channel 100 V, 27.5 mΩ standard level MOSFET
BUK7K32-100E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 2 September 2015 5 / 13
003aaj748
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
-2
10
-1
1
10
t
p
(s)
Z
th(j-mb)
Z
th(j-mb)
(K/W)(K/W)
P
t
t
p
T
t
p
δ =
T
single shotsingle shot
δ = 0.5δ = 0.5
0.20.2
0.10.1
0.050.05
0.020.02
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics FET1 and FET2
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C 90 - - VV
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C 100 - - V
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
Fig. 9; Fig. 10
2.4 3 4 V
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
Fig. 10
1 - - V
V
GS(th)
gate-source threshold
voltage
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
Fig. 10
- - 4.5 V
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C - 0.02 1 µAI
DSS
drain leakage current
V
DS
= 100 V; V
GS
= 0 V; T
j
= 175 °C - - 500 µA
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C - 2 100 nAI
GSS
gate leakage current
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C - 2 100 nA
V
GS
= 10 V; I
D
= 5 A; T
j
= 25 °C; Fig. 11 - 21.5 27.5 mΩR
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 5 A; T
j
= 175 °C;
Fig. 11; Fig. 12
- 55 76 mΩ
Dynamic characteristics FET1 and FET2
Q
G(tot)
total gate charge - 34 - nC
Q
GS
gate-source charge - 6.5 - nC
Q
GD
gate-drain charge
I
D
= 5 A; V
DS
= 80 V; V
GS
= 10 V;
T
j
= 25 °C; Fig. 13; Fig. 14
- 12.9 - nC
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK7K32-100EX

Mfr. #:
Buy BUK7K32-100EX
Manufacturer:
Nexperia
Description:
MOSFET BUK7K32-100E/LFPAK56D/REEL 7
Lifecycle:
New from this manufacturer.
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