NXP Semiconductors
BUK7K32-100E
Dual N-channel 100 V, 27.5 mΩ standard level MOSFET
BUK7K32-100E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 2 September 2015 6 / 13
Symbol Parameter Conditions Min Typ Max Unit
C
iss
input capacitance - 1603 2137 pF
C
oss
output capacitance - 164 196 pF
C
rss
reverse transfer
capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; Fig. 15
- 109 150 pF
t
d(on)
turn-on delay time - 7.8 - ns
t
r
rise time - 10.9 - ns
t
d(off)
turn-off delay time - 24.2 - ns
t
f
fall time
V
DS
= 80 V; R
L
= 15 Ω; V
GS
= 10 V;
R
G(ext)
= 5 Ω; T
j
= 25 °C
- 13.8 - ns
Source-drain diode FET1 and FET2
V
SD
source-drain voltage I
S
= 5 A; V
GS
= 0 V; T
j
= 25 °C; Fig. 16 - 0.78 1.2 V
t
rr
reverse recovery time - 35.9 - ns
Q
r
recovered charge
I
S
= 5 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 50 V; T
j
= 25 °C
- 52.8 - nC
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0 1 2 3 4
0
6
12
18
24
30
V
DS
(V)
I
D
I
D
(A)(A)
4 V4 V
V
GS
= 4.5 VV
GS
= 4.5 V
5 V5 V
5.5 V5.5 V10 V10 V
T
j
= 25 °C; t
p
= 300 μs
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
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0 5 10 15 20
0
20
40
60
80
100
V
GS
(V)
R
DSon
R
DSon
(mΩ)(mΩ)
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
