2DB1697-13 Datasheet 2DB1697-13 | P1-P3

2DB1697

Document number: DS31618 Rev. 3 - 2

1 of 5

www.diodes.com

April 2012

2DB1697

NEW PRODUCT

12V LOW V

CE(sat)

PNP SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• Complementary NPN Type Available (2DD2661)

• Totally Lead-Free & Fully RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

Mechanical Data

• Case: SOT89

• Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Weight: 0.052 grams (approximate)

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

2DB1697-13 1697 13 12 2500

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Top View

Device Schematic

Top View

Pin Out Configuration

1697 = Product Type Marking Code

YWW = Date Code Marking

Y = Last digit of year (ex: 8 = 2008)

WW = Week code (01 – 53)

1697

YWW

SOT89

4

3

2

1

C

B

E

COLLECTOR

EMITTE

R

BASE

2, 4

3

1

2DB1697

Document number: DS31618 Rev. 3 - 2

2 of 5

www.diodes.com

April 2012

2DB1697

NEW PRODUCT

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

-15 V

Collector-Emitter Voltage

V

CEO

-12 V

Emitter-Base Voltage

V

EBO

-6 V

Peak Pulse Current

I

CM

-4 A

Continuous Collector Current

I

C

-2 A

Thermal Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 4)

P

D

0.9 W

Thermal Resistance, Junction to Ambient Air (Note 4)

R

θ

JA

139 °C/W

Power Dissipation (Note 5)

P

D

2 W

Thermal Resistance, Junction to Ambient Air (Note 5)

R

θ

JA

62.5 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150 °C

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Conditions

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

V

(

BR

)

CBO

-15

⎯ ⎯

V

I

C

= -100μA, I

E

= 0

Collector-Emitter Breakdown Voltage (Note 6)

V

(

BR

)

CEO

-12

⎯ ⎯

V

I

C

= -10mA, I

B

= 0

Emitter-Base Breakdown Voltage

V

(

BR

)

EBO

-6

⎯ ⎯

V

I

E

= -100μA, I

C

= 0

Collector Cut-Off Current

I

CBO

⎯ ⎯

-0.1

μA

V

CB

= -15V, I

E

= 0

Emitter Cut-Off Current

I

EBO

⎯ ⎯

-0.1

μA

V

EB

= -6V, I

C

= 0

ON CHARACTERISTICS (Note 6)

Collector-Emitter Saturation Voltage

V

CE

(

SAT

)

⎯

-65 -180 mV

I

C

= -1A, I

B

= -50mA

DC Current Gain

h

FE

270

⎯

680

⎯

V

CE

= -2V, I

C

= -200mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

obo

⎯

40

⎯

pF

V

CB

= -10V, I

E

= 0,

f = 1MHz

Current Gain-Bandwidth Product

f

T

⎯

140

⎯

MHz

V

CE

= -2V, I

C

= -100mA,

f = 100MHz

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.

5. Device mounted on FR-4 PCB with 1 inch

2

copper pad layout.

6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

2DB1697

Document number: DS31618 Rev. 3 - 2

3 of 5

www.diodes.com

April 2012

2DB1697

NEW PRODUCT

0

P , POWER DISSIPATION (W)

D

T , AMBIENT TEMPERATURE ( C)

A

°

Note 4

Fig. 1 Power Dissipation vs. Ambient Temperature

0.4

0.8

1.2

1.6

2.0

25 50 75 100 125 150

Note 5

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

01 2 3 4

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage

-I ,

C

O

LLE

C

T

O

R

C

U

R

EN

T

(A)

C

I = -1mA

B

I = -2mA

B

I = -3mA

B

I = -4mA

B

I = -5mA

B

1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 3 Typical DC Current Gain vs. Collector Current

100

10,000

h, D

C

U

R

E

N

T

G

AI

N

FE

1,000

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V = -4V

CE

1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

0.001

0.01

0.1

1

-V ,

C

O

LLE

C

T

O

R

-EMI

T

E

R

SATURATION

CE(SAT)

VOLTAGE (V)

I/I = 20

CB

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

0

0.2

0.4

0.6

0.8

1.0

1.

2

-V , BASE-EMI

T

E

R

T

U

R

N-

O

N V

O

L

T

A

G

E (V)

BE(ON)

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V = -4V

CE

1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

0.2

0.4

0.6

0.8

1.0

1.

2

-V , BASE-EMI

T

E

R

SA

T

U

R

A

T

I

O

N V

O

L

T

A

G

E (V)

BE(SAT)

0

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

I = 20

CB

/I

2DB1697-13

2DB1697-13

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