2DB1697-13

2DB1697
Document number: DS31618 Rev. 3 - 2
4 of 5
www.diodes.com
April 2012
© Diodes Incorporated
2DB1697
NEW PRODUCT
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 7 Typical Capacitance Characteristics
10
100
1,000
C
A
P
A
C
I
T
AN
C
E (p
F
)
C
ibo
C
obo
f = 1MHz
V = -2V
f = 100MHz
CE
0102030405060708090100
-I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
1
10
100
1,000
f,
G
AI
N
-BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = -2V
f = 100MHz
CE
Package Outline Dimensions
Suggested Pad Layout
SOT89
Dim Min Max
A 1.40 1.60
B 0.44 0.62
B1 0.35 0.54
C 0.35 0.43
D 4.40 4.60
D1 1.52 1.83
E 2.29 2.60
e 1.50 Typ
e1 3.00 Typ
H 3.94 4.25
L 0.89 1.20
All Dimensions in mm
Dimensions Value (in mm)
X 0.900
X1 1.733
X2 0.416
Y 1.300
Y1 4.600
Y2 1.475
Y3 0.950
Y4 1.125
C 1.500
e
D
H
L
A
C
E
8
°
(
4
X
)
B1
B
D1
R
0
.
2
0
0
e1
Y1
X1
Y2
Y
C
X (3x)
Y3
Y4
X2 (2x)
2DB1697
Document number: DS31618 Rev. 3 - 2
5 of 5
www.diodes.com
April 2012
© Diodes Incorporated
2DB1697
NEW PRODUCT
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
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Copyright © 2012, Diodes Incorporated
www.diodes.com

2DB1697-13

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT LO VSAT PNP SMT 2.5K
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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