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MBT3904DW1T1G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 11
1 Publication Order Number:
MBT3904DW1T1/D
MBT3904DW1,
MBT3904DW2,
SMBT3904DW1,
NSVMBT3904DW1
Dual General Purpose
Transistors
The MBT3904DW1 and MBT3904DW2 devices are a spin−off of
our popular SOT−23/SOT−323 three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−363
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• h
FE
, 100−300
• Low V
CE(sat)
, ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
40 Vdc
Collector−Base Voltage V
CBO
60 Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
200 mAdc
Electrostatic Discharge ESD HBM Class 2
MM Class B
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Package Dissipation (Note 1)
T
A
= 25°C
P
D
150 mW
Thermal Resistance,
Junction−to−Ambient
R
q
JA
833 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
Device
Package
Shipping
†
ORDERING INFORMATION
SOT−363/SC−88/
SC70−6
CASE 419B
Q
1
(1)(2)
(3)
(4) (5) (6)
Q
2
MBT3904DW1T1
STYLE 1
www.onsemi.com
1
6
XX MG
G
1
6
MARKING
DIAGRAM
XX=MA for MBT3904DW1T1G
MJ for MBT3904DW2T1G
M =Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
Q
1
(1)(2)
(3)
(4) (5)
Q
2
MBT3904DW2T1
STYLE 27
(6)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MBT3904DW1T1G,
MBT3904DW2T1G
SOT−363
(Pb−Free)
3000 /
Tape & Ree
l
SMBT3904DW1T1G SOT−363
(Pb−Free)
3000 /
Tape & Ree
l
NSVMBT3904DW1T3G
SOT−363
(Pb−Free)
10000 /
Tape & Ree
l
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
40 −
Vdc
Collector−Base Breakdown Voltage
(I
C
= 10 mAdc, I
E
= 0)
V
(BR)CBO
60 −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
6.0 −
Vdc
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
I
BL
− 50
nAdc
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
I
CEX
− 50
nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
h
FE
40
70
100
60
30
−
−
300
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
−
−
0.2
0.3
Vdc
Base−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
BE(sat)
0.65
−
0.85
0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
300 −
MHz
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 4.0
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
− 8.0
pF
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
ie
1.0
2.0
10
12
k W
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
re
0.5
0.1
8.0
10
X 10
−4
Small−Signal Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
fe
100
100
400
400
−
Output Admittance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
oe
1.0
3.0
40
60
mmhos
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 100 mAdc, R
S
= 1.0 k W, f = 1.0 kHz)
NF
− 5.0
dB
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1
www.onsemi.com
3
SWITCHING CHARACTERISTICS
Characteristic Symbol Min Max Unit
Delay Time
(V
CC
= 3.0 Vdc, V
BE
= −0.5 Vdc)
t
d
− 35
ns
Rise Time (I
C
= 10 mAdc, I
B1
= 1.0 mAdc) t
r
− 35
Storage Time (V
CC
= 3.0 Vdc, I
C
= 10 mAdc) t
s
− 200
ns
Fall Time (I
B1
= I
B2
= 1.0 mAdc) t
f
− 50
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
+3 V
275
10 k
1N916
C
s
< 4 pF*
+3 V
275
10 k
C
s
< 4 pF*
< 1 ns
-0.5 V
+10.9 V
300 ns
DUTY CYCLE = 2%
< 1 ns
-9.1 V′
+10.9 V
DUTY CYCLE = 2%
t
1
0
10 < t
1
< 500 ms
* Total shunt capacitance of test jig and connectors
P1-P3P4-P6P7-P8

MBT3904DW1T1G

Mfr. #:
Buy MBT3904DW1T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 200mA 60V Dual NPN
Lifecycle:
New from this manufacturer.
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