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MBT3904DW1T1G

P1-P3P4-P6P7-P8
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1
www.onsemi.com
4
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
I
C
, COLLECTOR CURRENT (mA)
5000
1.0
V
CC
= 40 V
I
C
/I
B
= 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20
30 40
0.2 0.3 0.5 0.7
Q
T
Q
A
C
ibo
C
obo
T
J
= 25°C
T
J
= 125°C
Figure 5. Turn−On Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
Figure 6. Rise Time
I
C
, COLLECTOR CURRENT (mA)
TIME (ns)
1.0 2.0 3.0 10 20
70
5
100
t , RISE TIME (ns)
Figure 7. Storage Time
I
C
, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0
30 50
200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0 30 50
200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0
30 50
200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0
30 50
200
10
30
7
20
r
t , FALL TIME (ns)
f
t , STORAGE TIME (ns)
s
′
V
CC
= 40 V
I
C
/I
B
= 10
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 10
t
r
@ V
CC
= 3.0 V
t
d
@ V
OB
= 0 V
40 V
15 V
2.0 V
I
C
/I
B
= 10
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 20
t′
s
= t
s
-
1
/
8
t
f
I
B1
= I
B2
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1
www.onsemi.com
5
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
Figure 9. Noise Figure
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 10. Noise Figure
R
S
, SOURCE RESISTANCE (k OHMS)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20
40
0.2 0.4
0
100
4
6
8
10
12
2
14
0.1 1.0 2.0 4.0 10 20
40
0.2 0.4
100
NF, NOISE FIGURE (dB)
f = 1.0 kHz
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50 mA
I
C
= 100 mA
SOURCE RESISTANCE = 200 W
I
C
= 1.0 mA
SOURCE RESISTANCE = 200 W
I
C
= 0.5 mA
SOURCE RESISTANCE = 500 W
I
C
= 100 mA
SOURCE RESISTANCE = 1.0 k
I
C
= 50 mA
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
Figure 11. Current Gain
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 12. Output Admittance
I
C
, COLLECTOR CURRENT (mA)
h , CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 13. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0
5.0
0.5
10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (x 10 )
re
h , INPUT IMPEDANCE (k OHMS)
ie
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
2
1
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
fe
m
-4
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1
www.onsemi.com
6
TYPICAL STATIC CHARACTERISTICS
Figure 15. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50
70
0.2 0.3
0.1
100
1.00.7
200
30205.0 7.0
FE
V
CE
= 1.0 V
T
J
= +125°C
+25°C
-55°C
Figure 16. Collector Saturation Region
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
0
1.00.7 5.0 7.0
CE
I
C
= 1.0 mA
T
J
= 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
Figure 17. “ON” Voltages
I
C
, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
1.2
0.2
Figure 18. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20
50
0
100
-0.5
0
0.5
1.0
0 60 80 120 140 160
180
20 40
100
COEFFICIENT (mV/ C)
200
-1.0
-1.5
-2.0
200
°
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
=10
V
CE(sat)
@ I
C
/I
B
=10
V
BE
@ V
CE
=1.0 V
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
q
VC
FOR V
CE(sat)
q
VB
FOR V
BE(sat)
P1-P3P4-P6P7-P8

MBT3904DW1T1G

Mfr. #:
Buy MBT3904DW1T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 200mA 60V Dual NPN
Lifecycle:
New from this manufacturer.
Delivery:
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