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STPS2L30AF

P1-P3P4-P6P7-P9P10-P10
April 2008 Rev 6 1/10
10
STPS2L30
Low drop power Schottky rectifier
Features
■ Low cost device with low drop forward voltage
for less power dissipation
■ Optimized conduction/reverse losses trade-off
which lead to the highest yield in the
applications
■ Surface mount miniature packages
■ Avalanche capability specified
Description
Single Schottky rectifier suited to switched mode
power supplies and high frequency DC to DC
converters, freewheel diode and integrated circuit
latch up protection.
Packaged in SMA and low profile SMA and SMB,
this device is especially intended for use in
parallel with MOSFETs in synchronous
rectification.
Table 1. Device summary
I
F(AV)
2 A
V
RRM
30 V
T
j
(max) 150 °C
V
F
(max) 0.375 V
K
A
K
A
K
A
SMA
STPS2L30A
SMB flat
STPS2L30UF
SMA flat
STPS2L30AF
www.st.com
Characteristics STPS2L30
2/10
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.24 x I
F(AV)
+ 0.068 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 30 V
I
F(AV)
Average forward current
SMA flat T
L
= 130 °C δ = 0.5
2ASMA T
L
= 120 °C δ = 0.5
SMB flat T
L
= 135 °C δ = 0.5
I
FSM
Surge non repetitive forward current t
p
=10 ms sinusoidal 75 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs Tj = 25 °C 1500 W
T
stg
Storage temperature range -65 to + 150 °C
T
j
Operating junction temperature
(1)
150 °C
1. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j a–()
--------------------------
<
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead
SMA flat 20
°C/WSMA 30
SMB flat 15
Table 4. Static electrical characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
200 µA
T
j
= 100 °C 6 15 mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 2 A
0.45
V
T
j
= 125 °C 0.325 0.375
T
j
= 25 °C
I
F
= 4 A
0.53
T
j
= 125 °C 0.43 0.51
1. Pulse test: t
p
= 380 µs, δ < 2%
STPS2L30 Characteristics
3/10
Figure 1. Average forward power dissipation
versus average forward current
Figure 2. Average forward current versus
ambient temperature (δ = 0.5) SMA
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
P (W)
F(AV)
T
δ
=tp/T
tp
I (A)
F(AV)
δ = 1
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0 25 50 75 100 125 150
I (A)
F(AV)
T (°C)
amb
R =120°C/W
th(j-a)
R=R
th(j-a) th(j-l)
SMA
T
δ
=tp/T
tp
Figure 3. Average forward current
versus ambient temperature
(δ = 0.5) SMB flat
Figure 4. Average forward current
versus ambient temperature
(δ = 0.5) SMA flat
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0 25 50 75 100 125 150
I (A)
F(AV)
T (°C)
amb
R=R
th(j-a) th(j-l)
T
δ
=tp/T
tp
SMB flat
R =120°C/W
th(j-a)
I (A)
F(AV)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0 25 50 75 100 125 150
R
th(j-a)
=R
th(j-l)
T
δ
=tp/T
tp
R
th(j-a)
=200 °C/W
SMA-Flat
T (°C)
amb
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values) SMA
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values) SMB flat
0
1
2
3
4
5
6
7
8
9
10
1.E-03 1.E-02 1.E-01 1.E+00
IM
t
δ=0.5
I (A)
M
t(s)
T =25°C
a
T =75°C
a
T =125°C
a
SMA
0
5
10
15
20
25
30
1.E-03 1.E-02 1.E-01 1.E+00
I (A)
M
T =25°C
L
T =75°C
L
T =125°C
L
SMB flat
(non exposed pad)
IM
t
δ=0.5
t(s)
P1-P3P4-P6P7-P9P10-P10

STPS2L30AF

Mfr. #:
Buy STPS2L30AF
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 30V Low Drop Rec 2A If 0.375V VF
Lifecycle:
New from this manufacturer.
Delivery:
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