CY22150
Document #: 38-07104 Rev. *I Page 10 of 16
Applications
Controlling Jitter
Jitter is defined in many ways including: phase noise, long term
jitter, cycle to cycle jitter, period jitter, absolute jitter, and deter-
ministic. These jitter terms are usually given in terms of rms,
peak to peak, or in the case of phase noise dBC/Hz with respect
to the fundamental frequency.
Power supply noise and clock output loading are two major
system sources of clock jitter. Power supply noise is mitigated by
proper power supply decoupling (0.1 μF ceramic cap 0.25”) of
the clock and ensuring a low impedance ground to the chip.
Reducing capacitive clock output loading to a minimum lowers
current spikes on the clock edges and thus reduces jitter.
Reducing the total number of active outputs also reduce jitter in
a linear fashion. However, it is better to use two outputs to drive
two loads than one output to drive two loads.
The rate and magnitude that the PLL corrects the VCO frequency
is directly related to jitter performance. If the rate is too slow, then
long term jitter and phase noise is poor. Therefore, to improve
long term jitter and phase noise, reducing Q to a minimum is
advisable. This technique increases the speed of the Phase
Frequency Detector which in turn drive the input voltage of the
VCO. In a similar manner increasing P till the VCO is near its
maximum rated speed also decreases long term jitter and phase
noise. For example: Input Reference of 12 MHz; desired output
frequency of 33.3 MHz. The following solution is possible: Set
Q = 3, P = 25, Post Div = 3. However, the best jitter results is
Q = 2, P = 50, Post Div = 9.
For more information, contact your local Cypress field applica-
tions engineer.
Figure 8. Duty Cycle Definition; DC = t2/t1 Figure 9. Rise and Fall Time Definitions
Figure 10. Peak-to-Peak Jitter
Figure 7. Test Circuit
0.1 mF
V
DD
0.1 mF
AV
DD
CLK out
C
LOAD
GND
OUTPUTS
V
DDL
0.1 μF
t3
CLK
80%
20
%
t4
t1
t2
CLK
50%
50%
t6
[+] Feedback
CY22150
Document #: 38-07104 Rev. *I Page 11 of 16
Absolute Maximum Conditions
Parameter Description Min Max Unit
V
DD
Supply Voltage –0.5 7.0 V
V
DDL
I/O Supply Voltage –0.5 7.0 V
T
S
Storage Temperature
[2]
–65 125 °C
T
J
Junction Temperature 125 °C
Package Power Dissipation – Commercial Temp 450 mW
Package Power Dissipation – Industrial Temp 380 mW
Digital Inputs AV
SS
– 0.3 AV
DD
+ 0.3 V
Digital Outputs Referred to V
DD
V
SS
– 0.3 V
DD
+ 0.3 V
Digital Outputs Referred to V
DDL
V
SS
– 0.3 V
DDL
+0.3 V
ESD Static Discharge Voltage per MIL-STD-833, Method 3015 2000 V
Recommended Operating Conditions
Parameter Description Min Typ. Max Unit
V
DD
Operating Voltage 3.135 3.3 3.465 V
VDDL
HI
[3]
Operating Voltage 3.135 3.3 3.465 V
VDDL
LO
[3]
Operating Voltage 2.375 2.5 2.625 V
T
AC
Ambient Commercial Temp 0 70 °C
T
AI
Ambient Industrial Temp –40 85 °C
C
LOAD
Max. Load Capacitance, V
DD
/V
DDL
= 3.3V 15 pF
C
LOAD
Max. Load Capacitance, V
DDL
= 2.5V 15 pF
f
REFD
Driven REF 1 133 MHz
f
REFC
Crystal REF 8 30 MHz
t
PU
Power up time for all VDDs to reach minimum
specified voltage (power ramps must be monotonic)
0.05 500 ms
DC Electrical Characteristics
Parameter
[4]
Name Description Min Typ. Max Unit
I
OH3.3
Output High Current V
OH
= V
DD
– 0.5, V
DD
/V
DDL
= 3.3V (sink) 12 24 mA
I
OL3.3
Output Low Current V
OL
= 0.5, V
DD
/V
DDL
= 3.3V (source) 12 24 mA
I
OH2.5
Output High Current V
OH
= V
DDL
– 0.5, V
DDL
= 2.5V (source) 8 16 mA
I
OL2.5
Output Low Current V
OL
= 0.5, V
DDL
= 2.5V (sink) 8 16 mA
V
IH
Input High Voltage CMOS levels, 70% of V
DD
0.7 V
DD
V
IL
Input Low Voltage CMOS levels, 30% of V
DD
0.3 V
DD
C
IN
Input Capacitance SCLK and SDAT Pins 7 pF
I
IZ
Input Leakage Current SCLK and SDAT Pins 5 μA
V
HYS
Hysteresis of Schmitt
triggered inputs
SCLK and SDAT Pins 0.05 V
DD
I
VDD
[5,6]
Supply Current AV
DD
/V
DD
Current 45 mA
I
VDDL3.3
[5,6]
Supply Current V
DDL
Current (V
DDL
= 3.465V) 25 mA
I
VDDL2.5
[5,6]
Supply Current V
DDL
Current (V
DDL
= 2.625V) 17 mA
Notes
2. Rated for 10 years.
3. V
DDL
is only specified and characterized at 3.3V ± 5% and 2.5V ± 5%. V
DDL
may be powered at any value between 3.465V and 2.375V.
4. Not 100% tested.
5. I
VDD
currents specified for two CLK outputs running at 125 MHz, two LCLK outputs running at 80 MHz, and two LCLK outputs running at 66.6 MHz.
6. Use CyClocksRT to calculate actual I
VDD
and I
VDDL
for specific output frequency configurations.
[+] Feedback
CY22150
Document #: 38-07104 Rev. *I Page 12 of 16
AC Electrical Characteristics
Parameter
[7]
Name Description Min Typ. Max Unit
t1
Output Frequency,
Commercial Temp
Clock output limit, 3.3V 0.08 (80 kHz) 200 MHz
Clock output limit, 2.5V 0.08 (80 kHz) 166.6 MHz
Output Frequency,
Industrial Temp
Clock output limit, 3.3V 0.08 (80 kHz) 166.6 MHz
Clock output limit, 2.5V 0.08 (80 kHz) 150 MHz
t2
LO
Output Duty Cycle Duty cycle is defined in Figure 8 on page 10;
t1/t2
fOUT < 166 MHz, 50% of V
DD
45 50 55 %
t2
HI
Output Duty Cycle Duty cycle is defined in Figure 8; t1/t2
fOUT > 166 MHz, 50% of V
DD
40 50 60 %
t3
LO
Rising Edge Slew
Rate (V
DDL
= 2.5V)
Output clock rise time, 20% to 80% of V
DDL
.
Defined in Figure 9
0.6 1.2 V/ns
t4
LO
Falling Edge Slew
Rate (V
DDL
= 2.5V)
Output dlock fall time, 80% to 20% of V
DDL
.
Defined in Figure 9
0.6 1.2 V/ns
t3
HI
Rising Edge Slew
Rate (V
DDL
= 3.3V)
Output dlock rise time, 20% to 80% of
V
DD
/V
DDL
. Defined in Figure 9
0.8 1.4 V/ns
t4
HI
Falling Edge Slew
Rate (V
DDL
= 3.3V)
Output dlock fall time, 80% to 20% of V
DD
/V
DDL
.
Defined in Figure 9
0.8 1.4 V/ns
t5
[8]
Skew Output-output skew between related outputs 250 ps
t6
[9]
Clock Jitter Peak-to-peak period jitter 250 ps
t10
PLL Lock Time 0.30 3 ms
Device Characteristics
Parameter Name Value Unit
θ
JA
Theta JA 115 °C/W
Complexity Transistor Count 74,600 Transistors
[+] Feedback

CY22150KFC

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
IC CLOCK GEN PROG 16-TSSOP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet