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MBT3946DW1T2G

P1-P3P4-P6P7-P9P10-P11
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 7
1 Publication Order Number:
MBT3946DW1T1/D
MBT3946DW1T1G,
SMBT3946DW1T1G
Complementary General
Purpose Transistor
The MBT3946DW1T1G device is a spin-off of our popular
SOT−23/SOT−323 three-leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−363−6
surface mount package. By putting two discrete devices in one
package, this device is ideal for low-power surface mount applications
where board space is at a premium.
Features
• h
FE
, 100−300
• Low V
CE(sat)
, ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
Table 1. MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
(NPN)
(PNP)
V
CEO
40
−40
Vdc
Collector − Base Voltage
(NPN)
(PNP)
V
CBO
60
−40
Vdc
Emitter−Base Voltage
(NPN)
(PNP)
V
EBO
6.0
−5.0
Vdc
Collector Current − Continuous
(NPN)
(PNP)
I
C
200
−200
mAdc
Electrostatic Discharge ESD HBM Class 2
MM Class B
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Table 2. THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Package Dissipation (Note 1)
T
A
= 25°C
P
D
150 mW
Thermal Resistance,
Junction-to-Ambient
R
q
JA
833 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
SOT−363/SC−88
CASE 419B
STYLE 1
Q
1
(1)(2)
(3)
(4) (5) (6)
Q
2
MBT3946DW1T1*
*Q1 PNP
Q2 NPN
http://onsemi.com
46 M G
G
46 = Specific Device Code
M = Date Code
G = Pb-Free Package
MARKING DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
SC−88
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3,000 /
Tape & Reel
3,000 /
Tape & Reel
SC−88
(Pb-Free)
MBT3946DW1T1G
MBT3946DW1T2G
(Note: Microdot may be in either location)
SC−88
(Pb-Free)
3,000 /
Tape & Reel
SMBT3946DW1T1G
MBT3946DW1T1G, SMBT3946DW1T1G
http://onsemi.com
2
Table 3. ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
(I
C
= 1.0 mAdc, I
B
= 0) (NPN)
(I
C
= −1.0 mAdc, I
B
= 0) (PNP)
V
(BR)CEO
40
−40
−
−
Vdc
Collector−Base Breakdown Voltage
(I
C
= 10 mAdc, I
E
= 0) (NPN)
(I
C
= −10 mAdc, I
E
= 0) (PNP)
V
(BR)CBO
60
−40
−
−
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0) (NPN)
(I
E
= −10 mAdc, I
C
= 0) (PNP)
V
(BR)EBO
6.0
−5.0
−
−
Vdc
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc) (NPN)
(V
CE
= −30 Vdc, V
EB
= −3.0 Vdc) (PNP)
I
BL
−
−
50
−50
nAdc
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc) (NPN)
(V
CE
= −30 Vdc, V
EB
= −3.0 Vdc) (PNP)
I
CEX
−
−
50
−50
nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc) (NPN)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
= −0.1 mAdc, V
CE
= −1.0 Vdc) (PNP)
(I
C
= −1.0 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −50 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc)
h
FE
40
70
100
60
30
60
80
100
60
30
−
−
300
−
−
−
−
300
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc) (NPN)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
= −10 mAdc, I
B
= −1.0 mAdc) (PNP)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
CE(sat)
−
−
−
−
0.2
0.3
−0.25
−0.4
Vdc
Base −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc) (NPN)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
= −10 mAdc, I
B
= −1.0 mAdc) (PNP)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
BE(sat)
0.65
−
−0.65
−
0.85
0.95
−0.85
−0.95
Vdc
SMALL- SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz) (NPN)
(I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 100 MHz) (PNP)
f
T
300
250
−
−
MHz
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz) (NPN)
(V
CB
= −5.0 Vdc, I
E
= 0, f = 1.0 MHz) (PNP)
C
obo
−
−
4.0
4.5
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) (NPN)
(V
EB
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz) (PNP)
C
ibo
−
−
8.0
10.0
pF
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz) (NPN)
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz) (PNP)
h
ie
1.0
2.0
10
12
kW
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz) (NPN)
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz) (PNP)
h
re
0.5
0.1
8.0
10
X 10
− 4
Small−Signal Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz) (NPN)
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz) (PNP)
h
fe
100
100
400
400
−
MBT3946DW1T1G, SMBT3946DW1T1G
http://onsemi.com
3
Table 4. ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (continued)
Characteristic
Symbol Min Max Unit
Output Admittance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz) (NPN)
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz) (PNP)
h
oe
1.0
3.0
40
60
mmhos
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 100 mAdc, R
S
= 1.0 kW, f = 1.0 kHz) (NPN)
(V
CE
= −5.0 Vdc, I
C
= −100 mAdc, R
S
= 1.0 kW, f = 1.0 kHz) (PNP)
NF
−
−
5.0
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 3.0 Vdc, V
BE
= − 0.5 Vdc) (NPN)
(V
CC
= −3.0 Vdc, V
BE
= 0.5 Vdc) (PNP)
t
d
−
−
35
35
ns
Rise Time
(I
C
= 10 mAdc, I
B1
= 1.0 mAdc) (NPN)
(I
C
= −10 mAdc, I
B1
= −1.0 mAdc) (PNP)
t
r
−
−
35
35
Storage Time (V
CC
= 3.0 Vdc, I
C
= 10 mAdc) (NPN)
(V
CC
= −3.0 Vdc, I
C
= −10 mAdc) (PNP)
t
s
−
−
200
225
ns
Fall Time (I
B1
= I
B2
= 1.0 mAdc) (NPN)
(I
B1
= I
B2
= −1.0 mAdc) (PNP)
t
f
−
−
50
75
2. Pulse Test: Pulse WidthĂ≤Ă300Ăms; Duty CycleĂ≤Ă2.0%.
(NPN)
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
+3 V
275
10 k
1N916
C
s
< 4 pF*
+3 V
275
10 k
C
s
< 4 pF*
< 1 ns
-0.5 V
+10.9 V
300 ns
DUTY CYCLE = 2%
< 1 ns
-9.1 V′
+10.9 V
DUTY CYCLE = 2%
t
1
0
10 < t
1
< 500 ms
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
I
C
, COLLECTOR CURRENT (mA)
5000
1.0
V
CC
= 40 V
I
C
/I
B
= 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20
30 40
0.2 0.3 0.5 0.7
Q
T
Q
A
C
ibo
C
obo
T
J
= 25°C
T
J
= 125°C
(NPN)
(NPN)
P1-P3P4-P6P7-P9P10-P11

MBT3946DW1T2G

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Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 200mA 40V Dual Complementary
Lifecycle:
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